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Antonino Francesco Castiglia

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High Power Blue-Violet Superluminescent Light Emitting Diodes with InGaN Quantum Wells

Bias-dependent absorption coefficient of the absorber section in GaN-based multisection laser diodes

Growth of intersubband GaN/AlGaN heterostructures

Emission characteristics of GaN-based blue lasers including a lattice matched Al0.83In0.17N optical blocking layer for improved optical beam quality

GaN grown on (111) single crystal diamond substrate by molecular beam epitaxy

High reflectivity airgap distributed Bragg reflectors realized by wet etching of AlInN sacrificial layers

Al0.83In0.17N lattice-matched to GaN used as an optical blocking layer in GaN-based edge emitting lasers

Broadband blue superluminescent light-emitting diodes based on GaN

GaN-based laser diodes including a lattice-matched Al0.83In0.17N cladding layer

Towards room temperature electrically pumped blue vertical cavity surface emitting lasers