Antonino Francesco Castiglia

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Related publications (27)

Bias-dependent absorption coefficient of the absorber section in GaN-based multisection laser diodes

Nicolas Grandjean, Jean-François Carlin, Antonino Francesco Castiglia, Luca Alex Milo Sulmoni

We measure the modal absorption coefficient of the InGaN quantum wells (QWs) in the absorber section of (Al,In)GaN multisection laser diodes as a function of bias voltage and photon energy using optical gain-spectroscopy. In the examined laser diodes, the ...

AIP American Institute of Physics2010

Emission characteristics of GaN-based blue lasers including a lattice matched Al0.83In0.17N optical blocking layer for improved optical beam quality

Nicolas Grandjean, Jean-François Carlin, Julien Dorsaz, Eric Feltin, Antonino Francesco Castiglia, Gatien Cosendey

We demonstrate room-temperature continuous-wave operation of 425 nm InGaN-based blue laser diodes including a thin Al0.83In0.17N optical blocking layer. Structures are grown on c-plane GaN freestanding substrates with a lattice-matched AlInN layer position ...

AIP American Institute of Physics2010

AlGaN-Free Blue III-Nitride Laser Diodes Grown on c-Plane GaN Substrates

Nicolas Grandjean, Jean-François Carlin, Julien Dorsaz, Eric Feltin, Antonino Francesco Castiglia, Gatien Cosendey, Marco Rossetti

We report on the fabrication of InGaN-based multiple-quantum-well laser diodes (LDs) emitting at 420 nm. Structures with standard claddings (p-and n-AlGaN), asymmetric claddings (p-GaN and n-AlGaN), and AlGaN-free claddings were grown by metal organic vapo ...

2010

Towards room temperature electrically pumped blue vertical cavity surface emitting lasers

Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Jacques Levrat, Eric Feltin, Antonino Francesco Castiglia, Gatien Cosendey, Gabriel Christmann, Alexei Altoukhov

The authors report on strategies to achieve lasing in electrically driven vertical cavity surface emitting lasers at room temperature, namely the improvement of the quality factor of a microcavity suited for electrical injection, the use of a ZnO contact t ...

Ieee2009

High reflectivity airgap distributed Bragg reflectors realized by wet etching of AlInN sacrificial layers

Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Jacques Levrat, Eric Feltin, Antonino Francesco Castiglia, Alexei Altoukhov

The authors report on the achievement of a vertically oriented three pair airgap/GaN distributed Bragg reflector realized by controlled oxidation and wet-chemical etching of AlInN sacrificial layers. Microreflectivity measurements exhibit high peak reflect ...

2009

Broadband blue superluminescent light-emitting diodes based on GaN

Nicolas Grandjean, Jean-François Carlin, Julien Dorsaz, Eric Feltin, Antonino Francesco Castiglia, Gatien Cosendey, Luca Alex Milo Sulmoni

We report on the achievement of III-nitride blue superluminescent light-emitting diodes on GaN substrates. The epitaxial structure includes an active region made of In0.12Ga0.88N quantum wells in a GaN/AlGaN waveguide. Superluminescence under cw operation ...

2009

Al0.83In0.17N lattice-matched to GaN used as an optical blocking layer in GaN-based edge emitting lasers

Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Eric Feltin, Antonino Francesco Castiglia, Gatien Cosendey, Alexei Altoukhov

Nitride-based blue laser diode structures with either Al0.83In0.17N/Al0.07Ga0.93N or Al0.87In0.13N bottom claddings have been fabricated and compared to standard structures including solely Al0.07Ga0.93N bottom claddings. Lasing emission at 415 nm is achie ...

2009

GaN-based laser diodes including a lattice-matched Al0.83In0.17N cladding layer

Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Eric Feltin, Antonino Francesco Castiglia, Gatien Cosendey

Nitride blue lasers including an AlInN cladding lattice matched to GaN were fabricated. Lasing at 415nm is observed at 300K with a threshold current density of 7.5kA/cm(2) and a peak power of 140mW at 1.2A. (C) 2009 Optical Society of America ...

Ieee2009

GaN grown on (111) single crystal diamond substrate by molecular beam epitaxy

Nicolas Grandjean, Antonino Francesco Castiglia, Marco Malinverni, Denis Martin

GaN epilayers are grown on (111) oriented single crystal diamond substrate by ammonia-source molecular beam epitaxy. Each step of the growth is monitored in situ by reflection high energy electron diffraction. It is found that a two-dimensional epitaxial w ...

2009

High quality nitride based microdisks obtained via selective wet etching of AlInN sacrificial layers

Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Eric Feltin, Antonino Francesco Castiglia, Alexei Altoukhov, Dobri Simeonov

The authors report a technique for selective wet chemical etching of an AlInN sacrificial layer lattice-matched to GaN for the fabrication of air-gap photonic structures. It is used to demonstrate high quality factor (Q) microdisk cavities. Whispering gall ...

2008

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Emission characteristics of GaN-based blue lasers including a lattice matched Al0.83In0.17N optical blocking layer for improved optical beam quality

Nicolas Grandjean, Jean-François Carlin, Julien Dorsaz, Eric Feltin, Antonino Francesco Castiglia, Gatien Cosendey

AIP American Institute of Physics2010