Person

Davide Garetto

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Related publications (15)

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A surface potential-based model for embedded flash memory cells has been developed with the purpose of providing a comprehensive physical understanding of the device operation suitable for performance optimization in memory circuit design. The device equat ...

Pergamon-Elsevier Science Ltd2013

Numerical and Compact Modeling of Embedded Flash Memory Devices Targeted for IC Design

Davide Garetto

In a semiconductor market dominated by portable consumer applications, embedded flash memory technology has experienced a rapid diffusion. It is now considered the preferred solid-state memory solution for its non-volatile characteristics, high read and wr ...

EPFL2012

Modeling Stressed MOS Oxides Using a Multiphonon-Assisted Quantum Approach—Part I: Impedance Analysis

Alexandre Schmid, Yusuf Leblebici, Davide Garetto

Complementary MOS device electrical performances are considerably affected by the degradation of the oxide lay- ers and Si/SiO2 interfaces. A general expression for electrically stressed MOS impedance has been derived and applied within the nonradiative mu ...

Institute of Electrical and Electronics Engineers2012

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Multifrequency charge pumping analysis has been performed using a multiphonon-assisted charge trapping model in the view of analyzing the oxide region in energy and position that can be characterized using charge pumping (CP) characterization. Transient ph ...

Institute of Electrical and Electronics Engineers2012

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Pergamon-Elsevier Science Ltd2012

Analysis of defect capture cross sections using non-radiative multiphonon-assisted trapping model

Alexandre Schmid, Yusuf Leblebici, Davide Garetto

A multiphonon-assisted model included in a Poisson-Schroedinger solver has been applied to the calculation of the capture/emission trapping rates of CMOS oxide interface defects. The dependencies of trap capture cross-sections with trap energy, depth, appl ...

2012

The advantages and drawbacks of Capacitance vs Voltage (CV) characteristics, trap-assisted gate leakage tunneling and multi-frequency charge pumping techniques, have been brought out through an attentive investigation of oxide defects in CMOS technologies. ...

Springer Verlag2012

Characterization and 3D TCAD simulation of NOR-type flash non-volatile memories with emphasis on corner effects

Davide Garetto

The impact of 3D device architecture in aggressively scaled embedded non-volatile memories has been investigated by means of experiments and 3D TCAD simulations. A complete 3D calibration methodology covering DC and transient operating regimes has been int ...

2011

Characterization and physical modeling of endurance in embedded non-volatile memory technology

Alexandre Schmid, Yusuf Leblebici, Davide Garetto

Transient and endurance mechanisms in highperformance embedded non-volatile memory flash devices are investigated in detail. An extraction methodology combining measurements on equivalent transistors and flash cells is proposed to discriminate the effects ...

2011

AC analysis of defect cross sections using non-radiative MPA quantum model

Alexandre Schmid, Yusuf Leblebici, Davide Garetto

A multiphonon-assisted model included in a Poisson-Schroedinger solver has been applied for the calculation of the capture/emission trapping rates of Si/SiO2 interface defects and their dependence with respect to the trap energy and depth in the oxide. The ...

2011