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Defects in MOSFET oxides are a major issue in CMOS technologies, affecting not only the device electrical performances but also compromising reliability and endurance. Using Charge-Pumping and C-V measurements, defects have been characterized in native and ...
The importance of developing predictive modeling tools has considerably increased with the diffusion of nanoscale technologies, in which strained layers and heterojunctions determine the materials modeling complexity. A self--consistent Poisson--Schroeding ...
2010
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The floating gate (FG) potential VFG in a non–volatile flash memory (NVM) device is the main parameter controlling the behavior of the cell. A common technique to model VFG is based on the calculation of the coupling coefficients between all the terminals ...
This paper investigates and models Gate Induced Drain Leakage (GIDL) for a wide variety of high voltage devices with different low doped drain (LDD) structures. Based on TCAD simulations, we propose semi-analytical a pseudo-2D model for Gate induced Drain ...
Coupling coefficients calculation is known to be a critical issue in embedded Non-Volatile Memory (eNVM) compact modeling. In this paper we have implemented the charge balance method within the Brew’s Charge Sheet Model equation, determining the floating g ...
