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Davide Garetto

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Surface potential compact model for embedded flash devices oriented to IC memory design

Numerical and Compact Modeling of Embedded Flash Memory Devices Targeted for IC Design

Modeling Stressed MOS Oxides Using a Multiphonon-Assisted Quantum Approach—Part I: Impedance Analysis

Modeling Stressed MOS Oxides Using a Multiphonon-Assisted Quantum Approach—Part II: Transient Effects

Surface potential compact model for embedded flash devices oriented to IC memory design

Analysis of defect capture cross sections using non-radiative multiphonon-assisted trapping model

Comparing defect characterization techniques with non-radiative multiphonon charge trapping model AC analysis, trap-assisted-tunneling and charge pumping

Characterization and 3D TCAD simulation of NOR-type flash non-volatile memories with emphasis on corner effects

Characterization and physical modeling of endurance in embedded non-volatile memory technology

AC analysis of defect cross sections using non-radiative MPA quantum model

Surface potential compact model for embedded flash devices oriented to IC memory design

Modeling Stressed MOS Oxides Using a Multiphonon-Assisted Quantum Approach—Part I: Impedance Analysis

Numerical and Compact Modeling of Embedded Flash Memory Devices Targeted for IC Design

Analysis of defect capture cross sections using non-radiative multiphonon-assisted trapping model

Characterization and 3D TCAD simulation of NOR-type flash non-volatile memories with emphasis on corner effects

AC analysis of defect cross sections using non-radiative MPA quantum model

Modeling Stressed MOS Oxides Using a Multiphonon-Assisted Quantum Approach—Part II: Transient Effects

Comparing defect characterization techniques with non-radiative multiphonon charge trapping model AC analysis, trap-assisted-tunneling and charge pumping

Characterization and physical modeling of endurance in embedded non-volatile memory technology

Surface potential compact model for embedded flash devices oriented to IC memory design