Person
Ramin Matloub Aghdam
Related publications (13)
Fabrication, Characterization, and Simulation of Glass Devices with AlN Thin-Film Transducers for Excitation of Ultrasound Resonances
Paul Muralt, Ramin Matloub Aghdam
We present the fabrication of 570-mu m-thick millimeter-sized soda-lime-silicate float-glass blocks with a 1-mu m-thick AlN thin-film piezoelectric transducer sandwiched between thin metallic electrodes and deposited on the top surface. The electromechanic ...
AMER PHYSICAL SOC2021Resonant Pzt Mems Mirror With Segmented Electrodes
Paul Muralt, Ramin Matloub Aghdam, Mohssen Moridi
We report a transduction optimization method of piezo-based MEMS structures using segmentation of the excitation electrodes. Optimal transduction is achieved by matching the electric field distribution to the polarization distribution including the direct ...
IEEE2020Abnormal Grain Growth in AlScN Thin Films Induced by Complexion Formation at Crystallite Interfaces
Paul Muralt, Ramin Matloub Aghdam, Silviu Cosmin Sandu, Stefan Mertin, Mohammad Fazel Parsapour Kolour, Vladimir Pashchenko
Sputter deposited Al(1-x)ScxN thin films with a Sc content from x = 0 to 43 at% are investigated by electron microscopy in order to study and explain the formation and growth of abnormally oriented grains (AOG). It is found that the latter did not nucleate ...
WILEY-V C H VERLAG GMBH2019Effect of AlN seed layer on crystallographic characterization of piezoelectric AlN
Paul Muralt, Luis Guillermo Villanueva Torrijo, Annalisa De Pastina, Ramin Matloub Aghdam, Kaitlin Marie Howell, Waqas Bashir
Ultrathin aluminum nitride (AlN) films are of great interest for integration into nanoelectromechanical systems for actuation and sensing. Given the direct relationship between crystallographic texture and piezoelectric (PZE) response, x-ray diffraction ha ...
2019A concept of wireless and passive very-high temperature sensor
Paul Muralt, Ramin Matloub Aghdam, Andrea Mazzalai
There is a need for sensors capable operating at temperatures above 1000 degrees C. We describe an innovative sensor that might achieve this goal. The sensor comprises two main elements: a thermocouple and a surface acoustic wave (SAW) strain sensor. The c ...
Amer Inst Physics2017Hybrid BAW/SAW AlN and AlScN Thin Film Resonator First Experimental data
Paul Muralt, Ramin Matloub Aghdam, Vladimir Pashchenko, Sylvain Ballandras
A novel type of hybrid resonator based on BAW transformation into SAW in a ridged layered structure was fabricated and characterized. Bulk waves are excited by micromachined piezoelectric AlScN pillars located on the non-piezoelectric Si and sapphire subst ...
Ieee201650 nm thick AlN Films for Actuation and Detection of Nanoscale Resonators
Paul Muralt, Luis Guillermo Villanueva Torrijo, Annalisa De Pastina, Ramin Matloub Aghdam, Kaitlin Marie Howell, Waqas Bashir
We report on the optimization of a multilayer platinum/aluminum nitride (AlN) stack with an AlN active layer thickness of 50 nm for piezoelectric actuation in nanoelectromechanical systems (NEMS). Experiments in reactive sputtering of AlN were used to find ...
2016Piezoelectric Coefficients of AlScN Thin Films in Comparison
Paul Muralt, Ramin Matloub Aghdam, Mahmoud Hadad
Since the discovery of a high piezoelectric response in AlScN by Akiyama and coworkers in 2009, a number of works of other groups confirmed the large increase of piezoelectricity when partially substituting Al cations by Sc cations, as long as the alloy gr ...
Ieee2016Converse mode piezoelectric coefficient for lead zirconate titanate thin film with interdigitated electrode
Paul Muralt, Ramin Matloub Aghdam, Robin Nigon, Silviu Cosmin Sandu, Andrea Mazzalai, Nachiappan Chidambaram, Davide Balma
The use of interdigitated electrodes (IDEs) in conjunction with ferroelectric thin films shows many attractive features for piezoelectric MEMS applications. In this work, growth of {1 0 0}-textured lead zirconate titanate (PZT) thin films was achieved on i ...
Institute of Physics2015Characterization and Fatigue of the Converse Piezoelectric Effect in PZT Films for MEMS Applications
Paul Muralt, Ramin Matloub Aghdam, Andrea Mazzalai, Nachiappan Chidambaram, Davide Balma
A measurement setup for the detailed study of the transverse piezoelectric coefficient e(31,f) in the converse (actuator) mode was developed. It allows the assessment of the piezoelectric stress in thin films on silicon cantilevers and provides for a corre ...
Institute of Electrical and Electronics Engineers2015