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Jun Ma

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Jun Ma

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Uni-directional GaN-on-Si MOSHEMTs with High Reverse-Blocking Voltage based on Nanostructured Schottky Drain

Semiconductor devices with multiple channels and three-dimensional electrodes

Semiconductor device comprising a three-dimensional field plate

Field Plate Design for Low Leakage Current in Lateral GaN Power Schottky Diodes: Role of the Pinch-Off Voltage

High-Voltage and Low-Leakage AlGaN/GaN Tri-Anode Schottky Diodes With Integrated Tri-Gate Transistors

High Performance Tri-gate GaN Power MOSHEMTs on Silicon Substrate

Reactions of hypoiodous acid with model compounds and the formation of iodoform in absence/presence of permanganate

Slanted Tri-gates for High-Voltage GaN Power Devices

Nitrate formation during ozonation as a surrogate parameter for abatement of micropollutants and the N-nitrosodimethylamine (NDMA) formation potential

900 V Reverse-Blocking GaN-on-Si MOSHEMTs With a Hybrid Tri-Anode Schottky Drain