We present AlGaN/GaN nanostructured Schottky barrier diodes (SBDs) on silicon substrate with high breakdown voltage (V-BR) and low reverse leakage current (I-R), based on a hybrid of tri-anode and tri-gate architectures. The fabricated SBDs presented a small turn-ON voltage (V-ON) of 0.76 +/- 0.05 V, since the tri-anode architecture formed direct Schottky contact to the 2-D electron gas (2DEG). The reverse characteristic was controlled electrostatically by an embedded tri-gate transistor, instead of relying only on the Schottky barrier. This resulted in low I-R below 10 and 100 nA/mm at large reverse biases up to 500 and 700 V, respectively. In addition, these devices exhibited record V-BR up to 1325 V at I-R of 1 mu A/mm, rendering an excellent high-power figure-of-merit (FOM) of 939 MW/cm(2) and demonstrating the significant potential of nanostructured GaN SBDs for future efficient power conversion.
Elison de Nazareth Matioli, Alessandro Floriduz, Zheng Hao
Edoardo Charbon, Claudio Bruschini, Ekin Kizilkan, Pouyan Keshavarzian, Won Yong Ha, Francesco Gramuglia, Myung Jae Lee