Person
Vladimir Pashchenko
This person is no longer with EPFL
Related publications (10)
Material Parameter Extraction for Complex AlScN Thin Film Using Dual Mode Resonators in Combination with Advanced Microstructural Analysis and Finite Element Modeling
Paul Muralt, Silviu Cosmin Sandu, Mohammad Fazel Parsapour Kolour, Vladimir Pashchenko, Kaoru Yamashita
Accurate property determination of the piezoelectric thin film material Al(1-x)Sc(x)N is necessary for designing the next generation of radio frequency resonators in mobile communication, and for testing results of ab initio calculations. Sound velocity an ...
WILEY2019Abnormal Grain Growth in AlScN Thin Films Induced by Complexion Formation at Crystallite Interfaces
Paul Muralt, Ramin Matloub Aghdam, Silviu Cosmin Sandu, Stefan Mertin, Mohammad Fazel Parsapour Kolour, Vladimir Pashchenko
Sputter deposited Al(1-x)ScxN thin films with a Sc content from x = 0 to 43 at% are investigated by electron microscopy in order to study and explain the formation and growth of abnormally oriented grains (AOG). It is found that the latter did not nucleate ...
WILEY-V C H VERLAG GMBH2019Free standing and solidly mounted Lamb wave resonators based on Al0.85Sc0.15N thin film
Paul Muralt, Mohammad Fazel Parsapour Kolour, Vladimir Pashchenko
Lamb wave microresonators with wavelengths of 5-8m, vibrating in the S0 mode, and having 75 electrode pairs were fabricated and characterized. The results were compared to theoretical predictions obtained by finite element simulation. The active material w ...
AMER INST PHYSICS2019Growth, Properties, and Applications of Al1-xScxN Thin Films
Paul Muralt, Stefan Mertin, Mohammad Fazel Parsapour Kolour, Vladimir Pashchenko
The discovery of enhanced piezoelectricity in solid solutions of AlN and ScN is certainly one of the most important events in piezoelectric MEMS. As compared to pure AlN, it brought a crucial factor 2 to 3 improvement in a number of figures of merit govern ...
IEEE2019Determination of elastic and piezoelectric properties of Al0.84Sc0.16N thin films
Paul Muralt, Mohammad Fazel Parsapour Kolour, Vladimir Pashchenko
In this work, bar- and disk-shaped resonators were fabricated using Al(0.8)4Sc(0.16)N thin film Sensitivity analysis of the resonators' resonance frequencies with respect to the piezoelectric material parameters revealed that resonance analysis can be used ...
IEEE2018Material Constants Extraction For Alscn Thin Films Using A Dual Mode Baw Resonator
Paul Muralt, Mohammad Fazel Parsapour Kolour, Vladimir Pashchenko
Dual mode bulk acoustic wave resonators were fabricated using tilted c-axis oriented grains. In this case, longitudinal and shear modes are excited at the same time. The stiffness matrix for the tilted geometry was derived, and served to determine c(33) an ...
IEEE2018Effective SAW excitation on non-piezoelectric substrate using AlScN piezoelectric thin film BAW/SAW hybrid transducer
Paul Muralt, Mohammad Fazel Parsapour Kolour, Vladimir Pashchenko, Sylvain Ballandras
Acoustic delay lines based on Al0.85Sc0.15N thin film hybrid transducers were investigated by finite element modeling. It was found that an acoustic impedance matching between transducer and non-piezoelectric substrate material plays a crucial role to effi ...
Ieee2017Enhanced piezoelectric properties of c-axis textured aluminium scandium nitride thin films with high scandium content: influence of intrinsic stress and sputtering parameters
Paul Muralt, Gabriel Christmann, Silviu Cosmin Sandu, Stefan Mertin, Clemens Benedict Nyffeler, Mohammad Fazel Parsapour Kolour, Vladimir Pashchenko
Aluminium scandium nitride (ASN) exhibits a largely enhanced piezoelectric response as compared to aluminium nitride (AlN), which makes it an upcoming piezoelectric material for use in next generation RF filters, sensors, actuators and energy harvesting de ...
Ieee2017Ex-situ AlN seed layer for (0001)-textured Al0.84Sc0.16N thin films grown on SiO2 substrates
Paul Muralt, Silviu Cosmin Sandu, Stefan Mertin, Mohammad Fazel Parsapour Kolour, Vladimir Pashchenko
It is more difficult to nucleate AlN-ScN alloy thin films (AlScN) in pure (0001)-texture than it is with pure AlN thin films. AlN thus can serve as seed layer for AlScN. Equipment limitations may lead to the problem of a vacuum break between AlN and AlScN ...
Ieee2017Hybrid BAW/SAW AlN and AlScN Thin Film Resonator First Experimental data
Paul Muralt, Ramin Matloub Aghdam, Vladimir Pashchenko, Sylvain Ballandras
A novel type of hybrid resonator based on BAW transformation into SAW in a ridged layered structure was fabricated and characterized. Bulk waves are excited by micromachined piezoelectric AlScN pillars located on the non-piezoelectric Si and sapphire subst ...
Ieee2016