Publications by Myung Jae Lee | EPFL Graph Search

A Gradient-Gated SPAD Array for Non-Line-of-Sight Imaging

Edoardo Charbon, Pouyan Keshavarzian, Jiuxuan Zhao, Francesco Gramuglia, Myung Jae Lee

Time-resolved non-line-of-sight (NLOS) imaging based on single-photon avalanche diode (SPAD) detectors have demonstrated impressive results in recent years. To acquire adequate number of indirect photons from a hidden scene in the presence of overwhelming ...

Ieee-Inst Electrical Electronics Engineers Inc2024

SPAD Developed in 55 nm Bipolar-CMOS-DMOS Technology Achieving Near 90% Peak PDP

Edoardo Charbon, Claudio Bruschini, Ekin Kizilkan, Pouyan Keshavarzian, Francesco Gramuglia, Won Yong Ha, Myung Jae Lee

We present a single-photon avalanche diode (SPAD) developed in 55 nm bipolar-CMOS-DMOS (BCD) technology, which achieves high photon detection probability (PDP) while its breakdown voltage is lower than 20 V. To enhance the PDP performance, the SPAD junctio ...

Ieee-Inst Electrical Electronics Engineers Inc2024

Doping Engineering for PDP Optimization in SPADs Implemented in 55-nm BCD Process

Edoardo Charbon, Claudio Bruschini, Myung Jae Lee, Feng Liu

We introduce a new family of single-photon avalanche diodes (SPADs) with enhanced depletion regions in a 55-nm Bipolar-CMOS-DMOS (BCD) technology. We demonstrate how to systematically engineer doping profiles in the main junction and in deep p-well layers ...

Ieee-Inst Electrical Electronics Engineers Inc2024

A 73% Peak PDP Single-Photon Avalanche Diode Implemented in 110 nm CIS Technology With Doping Compensation

Edoardo Charbon, Claudio Bruschini, Ekin Kizilkan, Utku Karaca, Myung Jae Lee

In this article, we present 10 mu m diameter SPADs fabricated in 110 nm CIS technology based on an N (+) /HVPW junction, with enhanced sensitivity at short wavelengths. To reduce tunneling noise due to the highly-doped layers in the process, a doping compe ...

Ieee-Inst Electrical Electronics Engineers Inc2024

Extended Temperature Modeling of InGaAs/InP SPADs

Edoardo Charbon, Claudio Bruschini, Ekin Kizilkan, Utku Karaca, Vladimir Pesic, Myung Jae Lee

We present a simulation method to estimate the dark count rate (DCR), photon detection probability (PDP), and dark current of InGaAs/InP single-photon avalanche diodes (SPADs) from 225K to 300K. All simulations are performed completely in TCAD and match we ...

IEEE2023

Single-photon avalanche diode fabricated in standard 55 nm bipolar-CMOS-DMOS technology with sub-20 V breakdown voltage

Edoardo Charbon, Claudio Bruschini, Won Yong Ha, Myung Jae Lee

This paper presents a single-photon avalanche diode (SPAD) in 55 nm bipolar-CMOSDMOS (BCD) technology. In order to realize a SPAD having sub-20 V breakdown voltage for mobile applications while preventing high tunneling noise, a high-voltage N-well availab ...

Optica Publishing Group2023

Guard-Ring-Free InGaAs/InP Single-Photon Avalanche Diode Based on a Novel One-Step Zn-Diffusion Technique

Edoardo Charbon, Claudio Bruschini, Ekin Kizilkan, Utku Karaca, Vladimir Pesic, Myung Jae Lee

This work presents a novel InGaAs/InP SPAD structure fabricated using a selective area growth (SAG) method. The surface topography of the selectively grown film deposited within the 70 mu m diffusion apertures is used to engineer the Zn diffusion profile t ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

Low-noise high-dynamic-range single-photon avalanche diodes with integrated PQAR circuit in a standard 55 nm BCD

Edoardo Charbon, Claudio Bruschini, Ekin Kizilkan, Pouyan Keshavarzian, Francesco Gramuglia, Myung Jae Lee

Single-photon avalanche diode (SPAD) based sensors and systems enable a variety of applications in biomedical, automotive, consumer, and security domains. While several established standard technologies, which can facilitate the design of SPAD-based system ...

SPIE-INT SOC OPTICAL ENGINEERING2022

On Analog Silicon Photomultipliers in Standard 55-nm BCD Technology for LiDAR Applications

Edoardo Charbon, Pouyan Keshavarzian, Jiuxuan Zhao, Tommaso Milanese, Francesco Gramuglia, Myung Jae Lee

We present an analog silicon photomultiplier (SiPM) based on a standard 55-nm Bipolar-CMOS-DMOS (BCD) technology. The SiPM is composed of 16 x 16 single-photon avalanche diodes (SPADs) and measures 0.29 x 0.32 mm(2). Each SPAD cell is passively quenched by ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

A Low-noise CMOS SPAD Pixel with 12.1 ps SPTR and 3 ns Dead Time

Edoardo Charbon, Claudio Bruschini, Ming-Lo Wu, Francesco Gramuglia, Myung Jae Lee

In this paper, we present the first CMOS SPAD with performance comparable or better than that of the best custom SPADs, to date. The SPAD-based design, fully integrated in 180 nm CMOS technology, achieves a peak PDP of 55% at 480nm with a very broad spectr ...

2022