Publication

Predicting mask distortion, clogging and pattern transfer for stencil lithography

Related publications (60)

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The rapidly evolving field of 2D materials has developed a plethora of emerging micro/nano devices where atomically-thin materials play a fundamental role. In most cases, this implies the need of nanostructuring them, but due to their delicate nature, conv ...

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In proximity mask aligner photolithography, diffraction of light at the mask pattern is the predominant source for image shape distortions such as line end shortening and corner rounding. One established method to mitigate the impact of diffraction is opti ...

2019

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A continuous improvement of resolution in mask-aligner lithography is sought after to meet the requirements of an ever decreasing minimum feature size in back-end processes. For periodic structures, utilizing the Talbot effect for lithography has emerged a ...

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EPFL2018

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Printing industry and printing techniques are increasing its market value by new methodologies. The resolution and accuracy of the pattern transfer is always a challenge for the industry, especially for the proximity printing industries which use mask alig ...

Elsevier2017

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Photolithography is one of the earliest technologies used to transfer patterns to a substrate. It is also known as optical lithography since it uses light to transfer the pattern. The main exposure techniques exist in the industry are projection printing, ...

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Nanocrystalline (NC) metals have attracted widespread interest in materials science due to their high strength compared to coarse-grained counterparts. It is well know that during uniaxial deformation, the stress-strain behaviour exhibits an extraordinary ...

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Coherence management in lithography printing systems

Hans Peter Herzig, Toralf Scharf, Johana Bernasconi

In proximity lithography, interference and diffraction effects arise when printing small features because of the proximity gap. Different techniques are used in order to control and take advantage of theses effects. In this paper, the focus is set on the M ...

Spie-Int Soc Optical Engineering2016

Panel: Looking Backwards and Forwards

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Ten years ago, at 90 nanometers, EDA was challenged and deemed inadequate in dealing with increasing complexity, power consumption, and sub-wavelength lithography, thus harming the progress of mobile phones. Today, at 10 nanometers, integration capacity ha ...

IEEE2016

Lightfields behind amplitude masks Creating phase discontinuities

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Shaping of light fields behind amplitude and phase masks the basis the lithographic structure reproduction. The aerial image or better the intensity distribution defines the resolution of the structure to be printed. Contrast is the main parameter and to a ...

Ieee2016

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