Publication

Improvement of Crystal Quality of Epitaxial Silicon-Germanium Alloy Layers by Carbon Additions

Jean-Daniel Ganière
1994
Journal paper

Abstract

Improved Si1-xGex/Si hetero-epitaxy has been achieved by RTCVD in the presence of small amounts of C3H8 during growth. Carbon presumably scavenges oxygen and acts as a surfactant to inhibit three dimensional growth.

Official source

https://infoscience.epfl.ch/record/110869?ln=en

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Improvement of Crystal Quality of Epitaxial Silicon-Germanium Alloy Layers by Carbon Additions

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