Cathodoluminescence investigations of three-dimensional island formation in quantum wells
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In this letter the liquid phase epitaxial growth of In0.71Ga0.29As0.68P0.32 (lambda(g) = 1.32 mum) single quantum well structures lattice matched to (001) InP substrates is reported. The electrical and optical confinement was formed either by InP or In0.88 ...
Chemical beam epitaxy (CBE) grown InAsP/InGaAsP edge-emitting laser diodes on GaAs substrates obtained by localised fusion in a nitrogen environment exhibit high quality fused interfaces. A degradation of fused lasers is observed which is attributed to the ...
When a growth interruption is applied to the top interface of a nominally 3 monolayers (ML) thick InAs quantum well (QW), grown on an InP substrate, the InAs layer relaxes by formation of three-dimensional (3D) islands. The emission from the QW is split in ...
We report the growth behaviour of InP, InGaAs and InGaAsP on non-planar InP substrates where ridges were formed with (111)A, (211)A, (111)B and (551BAR) sidewall planes. All three materials grow uniformly on the whole patterned surface with (111)A and (211 ...
