TERRACE LENGTH COMMENSURABILITY AND SURFACE RECONSTRUCTION IN HIGHLY STRAINED INGAAS/GAAS QUANTUM-WELLS GROWN ON VICINAL SUBSTRATES
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We report a low-temperature photoluminescence study of a series of AlxGal-xN/GaN quantum wells of various widths L and with x ranging from 0.11 to 0.25, grown by molecular beam epitaxy on silicon (111) substrates. Such quantum wells are subject to an impor ...
The present work is devoted to the study of the dynamics of multi-photon processes in semiconductor heterostructures. A time-dependent description is important for understanding in detail the transient response of semiconductors excited by ultrashort optic ...
The coherent optical response of high quality microcavities containing quantum wells is investigated. The dynamics of the ac Stark effect is investigated by degenerate pump-probe experiments, by exciting the quantum well excitons at various intensities and ...
We have studied the influence of hydrostatic pressure on the light emission from a strained GaN/AlGaN multiquantum well system. We have found that the pressure coefficients of the photoluminescence peak energies are dramatically reduced with respect to tha ...
MBE-grown samples containing several GaN-AlxGa1-xN quantum wells of varying widths are studied by picosecond time-resolved photoluminescence. Extremely strong built-in electric fields are present in such systems, due to piezoelectric and pyroelectric effec ...
A dramatic suppression of the absorption of light by exciton polaritons is observed after resonant excitation of the polaritonic modes in a multiple quantum well Bragg structure. Time-resolved reflectivity measurements confirm that this is due to the forma ...
Photoluminescence excitation (PLE) spectroscopy was carried out to investigate the excitation/emission cycle of MBE grown InGaN quantum structures. Quantum well and Stranski-Krastanov type quantum box samples were chosen that emit from blue to red. The ban ...
We present an experimental and theoretical study of the size dependence of the coupling between electron-hole pairs and longitudinal-optical phonons in Ga1-xInxN/GaN-based quantum wells and quantum boxes. We found that the Huang-Rhys factor S, which determ ...
Silicon has become the most important material for the semiconductor industry, due to several advantages like good heat conductance or the high quality of its oxide. Nevertheless, for opto-electronic devices, the limitation of its indirect band-gap has ant ...
A novel method of controlling light absorption by exciton-polaritons is presented. The coherent light-induced coupling of excitons in multiple quantum well Bragg structures is exploited to sup press dramatically the absorption. Our results show that excito ...