TERRACE LENGTH COMMENSURABILITY AND SURFACE RECONSTRUCTION IN HIGHLY STRAINED INGAAS/GAAS QUANTUM-WELLS GROWN ON VICINAL SUBSTRATES
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The purpose of my thesis is to provide a theoretical analysis of the dynamics of optically excited carriers in semiconductor confined systems. In particular, I will focus the investigations on the effects due to the presence of a strong electron-hole Coulo ...
We report femtosecond pump and probe experiments in a semiconductor microcavity containing quantum wells. At high pump fields, the exciton-polariton Rabi doublet changes into a triplet structure. The triplet splitting increases as the square root of the in ...
We report on microscopic photoluminescence and photoluminescence excitation of thin Al0.3Ga0.7As/GaAs quantum wells grown on exactly oriented (001) GaAs substrates. The experiments are done at low temperature by selectively exciting a few mu m(2) of the sa ...
A study of the elastic exciton-exciton Coulomb scattering in a semiconductor quantum well is presented, including the interexciton exchange of carriers and the spin degrees of freedom. The theoretical results show that electron-electron and hole-hole excha ...
We have studied the luminescence of narrow quantum wires at photoexcitation densities of up to similar to 3 x 10(6) cm(-1). We show that even at these densities, which are well above the expected Mott density of 8 x 10(5) cm(-1), excitonic recombination do ...
Using femtosecond resonant luminescence, we have measured the intersubband scattering fare of electrons in wide GaAs quantum wells at very low excitation densities. Even when the spacing between the first two electron subbands is smaller than the LO phonon ...
We investigate a GaAs/(Ga,Al)As Fabry-Perot microcavity, into which (In,Ga)As quantum wells have been inserted. The cavity is wedge shaped, i.e., the detuning between the bare-exciton resonance and the bare optical cavity mode depends on the spatial positi ...
We investigate the exciton formation process from free carriers in a single GaAs quantum well. We focus on the formation processes assisted by emission and absorption of acoustic and optical phonons. The formation rates are evaluated and compared to the ex ...
Numerical and experimental results on the effect of randomness in GaAs/Al0.3Ga0.7As superlattices having a small number of randomly distributed well widths are reported. The numerical results indicate the splitting of the extended state miniband into sub-m ...
The spontaneous and stimulated emissions of strongly excited GaAs/(Ga,Al)As quantum wells are investigated in the one-dimensional optical amplifier geometry, using the variable-stripe-length method. The optical amplification and its saturation are studied ...