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Real time control of InxGa1-xN molecular beam epitaxy growth

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Real time control of InxGa1-xN molecular beam epitaxy growth

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GaN/GaInN-based light emitting diodes grown by molecular beam epitaxy using NH3

Molecular beam epitaxy of GaN under N-rich conditions using NH3

Si and Mg doped GaN layers grown by gas source molecular beam epitaxy using ammonia

Band edge versus deep luminescence of InxGa1-xN layers grown by molecular beam epitaxy

Molecular-beam epitaxy of gallium nitride on (0001) sapphire substrates using ammonia

Violet InGaN/GaN light emitting diodes grown by molecular beam epitaxy using NH3

GaN/AlxGa1-xN quantum wells grown by molecular beam epitaxy with thickness control at the monolayer scale

Indium surface segregation during chemical beam epitaxy of Ga1-xInxAs/GaAs and Ga1-xInxP/GaAs heterostructures

Effects of segregation on the optical properties of (In,Ga)As/GaAs quantum wells grown by MBE under various conditions

Real-time investigation of In surface segregation in chemical beam epitaxy of In0.5Ga0.5P on GaAs (001)