Real time control of InxGa1-xN molecular beam epitaxy growth
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Photoluminescence (PL), reflectivity and thermally-detected optical absorption (TDOA) experiments have been carried out, at liquid helium temperatures, On In0.35Ga0.65As/GaAs quantum wells (QWs) with different thicknesses of 4, 6, 8 and 10 monolayers (MLs) ...
We present a correlation between the behaviour of the RHEED specular reflected beam intensity during the initial phases of growth, the MBE growth conditions (T(s), P(As4), V(GaAs)), and the surface morphology examined by Nomarski contrast microscopy after ...
When InP is grown by chemical beam epitaxy on substrates patterned with ridges oriented along [110] with (111)B sidewall planes, the migration of In species on the surface changes direction with growth temperature. The movement is from the ridge to the val ...
We studied the formation of buried heterostructures obtained in a single growth step over nonplanar substrates patterned with ridges. When the ridge dimensions are large enough, the growth on the mesa top is similar to that on a planar substrate. In contra ...
We have studied the effect of growth interruptions on 2-monolayers-thick InAs/InP strained quantum wells (QW) grown by chemical beam epitaxy. The main feature is the formation of up to 8-monolayers-thick InAs islands during As2 annealing of the QW. Their f ...
