Publication

Efficiency of NH3 as nitrogen source for GaN molecular beam epitaxy

Related publications (32)

About
Privacy
Disclaimer

Graph Chatbot

Chat with Graph Search

Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.

DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.

Efficiency of NH3 as nitrogen source for GaN molecular beam epitaxy

Graph Chatbot

Chat with Graph Search

III-Nitride Semiconductor Photonic Nanocavities on Silicon

AlN grown on Si(111) by ammonia-molecular beam epitaxy in the 900-1200 degrees C temperature range

InGaN laser diodes emitting at 500 nm with p-layers grown by molecular beam epitaxy

Optimization of NH₃-MBE grown p-doped (Al)GaN layers and their implementation in long wavelength laser diodes and tunnel junctions

Investigation of the In composition in InGaN/GaN quantum wells deposited by MOVPE and/or MBE with emission from violet to green

Physics and applications of intersubband transitions in nitride based heterostructures

Strain-induced interface instability in GaN/AlN multiple quantum wells

Lattice-matched AlInN alloys for nitride-based optoelectronic devices

Indium surfactant effect on AlN/GaN heterostructures grown by metal-organic vapor-phase epitaxy: Applications to intersubband transitions

Stranski-Krastanov GaN/AlN quantum dots grown by metal organic vapor phase epitaxy