Publication

Molecular beam epitaxy of high quality InGaN alloys using ammonia: Optical and structural properties

Nicolas Grandjean
1999
Journal paper

Abstract

The growth of InGaN layers was carried out by molecular beam epitaxy (MBE). The nitrogen precursor was ammonia. The optical and structural properties of the InGaN layers have been investigated by transmission electron microscopy (TEM), x-ray diffraction (XRD) and photoluminescence (PL). For optimized growth conditions, the PL spectrum of InGaN (x=0.1) alloy is narrow (FWHM less than or equal to 50 meV) and the Stokes shift measured by PL excitation is weak (

Official source

https://infoscience.epfl.ch/record/152642?ln=en

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Molecular beam epitaxy of high quality InGaN alloys using ammonia: Optical and structural properties

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