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The control of the GaN-polarity is promising in view of achieving periodic polarity structures for non-linear optics. It is shown here that the polarity of GaN(0 0 0 1) epilayers can be reversed from Ga to N using a high Mg doping during molecular beam epi ...
Gallium Nitride (GaN) and its ternary alloys with aluminium and indium have met a growing interest in the last decade. These semiconductors have a large direct bandgap and can be doped with either silicon (Si) for n-type and magnesium (Mg) for p-type layer ...
In the past decades, III-nitride semiconductor compounds have attracted an increasing amount of interest due to their applications to blue-violet laser diodes and white light emitting diodes, or for their use as ultraviolet emitting devices for biomedical ...
A study of the GaN nanocolumns nucleation and growth by molecular beam epitaxy on Si(111) is presented. Ga droplets with different diameters (340-90 nm) were deposited on the substrate. prior to growth, to determine any effect on the nanocolumns size and d ...
We report on the growth by metalorganic vapor phase epitaxy of a InGaN/GaN resonant-cavity light emitting diode (RCLED) emitting at 454 nm and incorporating a 12-pair Al0.82In0.18N/GaN distributed Bragg reflector as bottom mirror. A(1-x)In(x)N layers with ...
It is shown that in GaN/AlN multiple quantum wells (MQWs), strain is a critical parameter for achieving short-wavelength intersubband transitions (ISBTs). This is investigated by comparing GaN/AlN MQWs grown by metal organic vapor phase epitaxy on either A ...
InGaN/GaN single quantum wells (SQWs) are grown by molecular beam epitaxy using ammonia as a nitrogen precursor. The InGaN material quality is optimized through the photoluminescence (PL) properties. It is found that the growth temperature is critical for ...
GaN and InGaN layers are grown by molecular beam epitaxy using ammonia as nitrogen precursor. The lattice mismatch between InN and GaN is very large and a Stranski-Krastanov (SK) growth mode transition can occur above a critical In composition. However, ch ...
We report on the progress in the growth of highly reflective AlInN-GaN distributed Bragg reflectors deposited by metalorganic vapor phase epitaxy. Al1-xInxN layers with an In content around x similar to 0.17 are lattice-matched to GaN, thus avoiding strain ...
Hydrogen-induced exfoliation combined with wafer bonding has been used to transfer similar to600-nm-thick films of (100) InP to Si substrates. Cross-section transmission electron microscopy (TEM) shows a transferred crystalline InP layer with no observable ...
