Publication

GaN on Si(111): From growth optimization to optical properties of quantum well structures

Related publications (45)

About
Privacy
Disclaimer

Graph Chatbot

Chat with Graph Search

Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.

DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.

GaN on Si(111): From growth optimization to optical properties of quantum well structures

Graph Chatbot

Chat with Graph Search

GaN grown on Si(111) substrate: From two-dimensional growth to quantum well assessment

Molecular beam epitaxy of high quality InGaN alloys using ammonia: Optical and structural properties

Violet to orange room temperature luminescence from GaN quantum dots on Si(111) substrates

Molecular beam epitaxy growth of nitride materials

Self-limitation of AlGaN/GaN quantum well energy by built-in polarization field

Real-time control of the molecular beam epitaxy of nitrides

Molecular-beam epitaxy of gallium nitride on (0001) sapphire substrates using ammonia

ZnSe growth on lattice-matched InxGa1-xAs substrates

Effect of the nitridation of the sapphire (0001) substrate on the GaN growth

Epitaxial relationships between GaN and Al2O3(0001) substrates