GaN grown on Si(111) substrate: From two-dimensional growth to quantum well assessment
Graph Chatbot
Chat with Graph Search
Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.
DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.
The conditions of splitting the reflectance, transmittance and absorption spectra of a dispersive symmetric Fabry-Perot microcavity are studied on the basis of classical multibeam interference formula, The special case of a monolithic semiconductor microca ...
GaN layers were grown by gas-source-molecular beam epitaxy on sapphire substrates using ammonia as a nitrogen source. The nitridation of an Al2O3 surface prior to the GaN growth was followed in situ by reflection high-energy electron diffraction. A strong ...
We have used variable-temperature scanning tunneling microscopy to study the aggregation of two-dimensional Ag clusters on Pt(111). A transition from randomly ramified to dendritic fractal growth is observed in the diffusion-limited regime. Atomic-scale ob ...
It is demonstrated by using reflection high-energy electron diffraction and transmission electron microscopy that the epitaxial growth of highly strained InxGa1-xAs (x>0.3) layers on GaAs(001) is improved by a preadsorbed Te surfactant layer. The formation ...
Variable-temperature scanning tunneling microscopy has been applied to study kinetic processes involved in epitaxial growth. This paper concentrates on nucleation and aggregation of submonolayer Ag films on a Pt(lll) surface. From island density versus tem ...
A study on the effect of growth interruptions on InAs/InP strained quantum wells (QW) by cathodoluminescence (CL) at helium temperature and transmission electron microscopy (TEM) is reported. The samples are grown by chemical beam epitaxy (CBE) with and wi ...
A high-reflectance GaInP/GaAs distributed Bragg reflector (DBR) was grown by chemical beam epitaxy (CBE). The mirror consists of 40 pairs of alternating layers and was designed for a centre wavelength of 980 nm, resulting in a total thickness of 5.8 mum. H ...
GaAs/AlxGa1-xAs multiple-quantum-well (MQW) structures with identical well thicknesses but with different Al contents x in the barrier (x almost-equal-to 0.1, 0.2, 0.45, and 1) were grown by molecular-beam epitaxy to study the impurity-induced disordering ...
Surface segregation processes during the growth of Ga0.5In0.5P/GaAs heterostructures by chemical beam epitaxy have been investigated in real time using reflection high-energy electron diffraction (RHEED). It is shown that In segregation occurs at both GaIn ...
We report on the realization of InGaAs-lnGaAsP separate confinement heterostructure multiple quantum well lasers grown by chemical beam epitaxy. We discuss key growth parameters and characterization by secondary-ion mass spectroscopy, transmission electron ...