Publication

GaN grown on Si(111) substrate: From two-dimensional growth to quantum well assessment

Related publications (132)

About
Privacy
Disclaimer

Graph Chatbot

Chat with Graph Search

Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.

DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.

GaN grown on Si(111) substrate: From two-dimensional growth to quantum well assessment

Graph Chatbot

Chat with Graph Search

InGaN laser diodes emitting at 500 nm with p-layers grown by molecular beam epitaxy

Nano-scale luminescence characterization of individual InGaN/GaN quantum wells stacked in a microcavity using scanning transmission electron microscope cathodoluminescence

Ultrathin rhodium nanosheets

An ultra-low temperature scanning Hall probe microscope for magnetic imaging below 40 mK

InAs1- xPx nanowires grown by catalyst-free molecular-beam epitaxy

UV-nanoimprint lithography and large area roll-to-roll texturization with hyperbranched polymer nanocomposites for light-trapping applications

Thermal annealing of molecular beam epitaxy-grown InGaN/GaN single quantum well

Defect Insensitive Light Emission in Blue Diode Materials Investigated by Electron Microscopy and Transmission Cathodoluminescence

Investigation of the In composition in InGaN/GaN quantum wells deposited by MOVPE and/or MBE with emission from violet to green

Determination of the band gap and the split-off band in wurtzite GaAs using Raman and photoluminescence excitation spectroscopy