Publication

MBE grown InGaN quantum dots and quantum wells: effects of in-plane localization

Related publications (148)

About
Privacy
Disclaimer

Graph Chatbot

Chat with Graph Search

Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.

DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.

MBE grown InGaN quantum dots and quantum wells: effects of in-plane localization

Graph Chatbot

Chat with Graph Search

III-N blue-emitting epi-structures with high densities of dislocations: Fundamental mechanisms for efficiency improvement and applications

Study of growth-induced point defects and their impact on InGaN-based optoelectronic devices

The nanoscale impact of individual nonradiative point defects on InGaN/GaN quantum wells

X-ray qualification of hydrogenated amorphous silicon sensors on flexible substrate

Donor-Acceptor-Donor "Hot Exciton" Triads for High Reverse Intersystem Crossing in OLEDs

Deep defects in InGaN LEDs: modeling the impact on the electrical characteristics

Modeling the electrical characteristic of InGaN/GaN blue-violet LED structure under electrical stress

Defect incorporation in In-containing layers and quantum wells: experimental analysis via deep level profiling and optical spectroscopy

Effects of quantum-well indium content on deep defects and reliability of InGaN/GaN light-emitting diodes with under layer

Modeling the electrical characteristics of InGaN/GaN LED structures based on experimentally-measured defect characteristics