Phonon replica dynamics in high quality GaN epilayers and AlGaN/GaN quantum wells
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Exciton localization in GaN/AlGaN quantum well structures is studied by photoluminescence. An anomalous temperature behavior of the photoluminescence from the quantum well is observed. With increasing temperature the energy position of the excitonic emissi ...
We have directly measured the carrier temperature in semiconductor optical amplifiers (SOAs) via spontaneous emission and we demonstrate an unexpectedly high carrier temperature. The direct correlation of the temperature increase with the carrier density s ...
LTCC technology is based on sintering of multi-layered thick-film sheets (50-250 µm) or so-called green tapes, which are screen-printed with thick-film pastes such as conductors, resistors, etc. The terms low temperature and co-fired originate from the rel ...
Previous experimental studies have allowed us to observe peculiar localization effects of excitons in GaN/AlGaN quantum wells grown by MBE, as well as efficient nonradiative inter-well carrier transfers. In this work, we use the envelope-function approxima ...
Recombination dynamics in InGaN/GaN quantum wells has been studied by time resolved photoluminescence (PL). The radiative recombination processes in these systems can be qualitatively explained on a nanometer-scale by a model based on the recombination dyn ...
GaN/InGaN heterostructures were grown by molecular beam epitaxy on sapphire (0001). The photoluminescence (PL) of InGaN/GaN quantum wells rapidly vanishes when the temperature increases from 10 to 100 K and is totally quenched above 150 K. This is the cons ...
We compare several InGaN-based low-dimensional systems, by time-resolved photoluminescence (PL), versus temperature (8 < T < 280 K). We investigate the influence of growing or not an AlGaN barrier on top of the active layer. We address the differences betw ...
In this thesis work, we report scanning near-field optical photoluminescence spectroscopy measurements with at best 200 nm spatial resolution performed on disordered semiconductor V-groove AlGaAs/GaAs quantum wires. In order to interpret the results of the ...
Despite a large amount of data and numerous theoretical proposals, the microscopic mechanism of ransport in thick-film resistors remains unclear. However, recent low-temperature measurements point toward a possible variable-range-hopping mechanism of trans ...
We engineer a semiconductor microcavity through an appropriate choice of geometry and materials in order to maximise the exciton-photon coupling. The polaritonic nonlinearities in such devices survive at high temperatures and high excitation densities. We ...