Publication

High-electron-mobility AlGaN/GaN heterostructures grown on Si(111) by molecular-beam epitaxy

About
Privacy
Disclaimer

Graph Chatbot

Chat with Graph Search

Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.

DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.

High-electron-mobility AlGaN/GaN heterostructures grown on Si(111) by molecular-beam epitaxy

Graph Chatbot

Chat with Graph Search

GaN growth on ScAlMgO4 substrates via thermally-dewetted thin Al films

Critical thickness of GaN on AlN: impact of growth temperature and dislocation density

InGaN laser diodes emitting at 500 nm with p-layers grown by molecular beam epitaxy

Intrinsic degradation mechanism of nearly lattice-matched InAlN layers grown on GaN substrates

Investigation of the In composition in InGaN/GaN quantum wells deposited by MOVPE and/or MBE with emission from violet to green

Non-polar GaN epilayers and heterostructures for photonic applications

HREM studies of twins in Cd1−xZnxTe (x ≈ 0.04) thin films grown by molecular beam epitaxy

Physics and applications of intersubband transitions in nitride based heterostructures

Effects of strain and composition on the lattice parameters and applicability of Vegard's rule in Al-rich Al1-xInxN films grown on sapphire

On the mechanisms of spontaneous growth of III-nitride nanocolumns by plasma-assisted molecular beam epitaxy