Publication
Magnetophotoluminescence has been studied from a single undoped GaN/AlxGa1-xN heterojunction with a linewidth of 2.5 meV. The peak originates from the recombination of a photoexcited hole with an electron in the two-dimensional electron gas (2DEG) formed as a result of spontaneous and piezoelectric polarizations at the interface. The photoluminescence intensity is strongly enhanced at filling factors corresponding to filled Landau levels as a result of the reduced screening of the Coulomb interaction by the 2DEG. This prevents the rapid diffusion of photoexcited holes away from the heterojunction. The energy of the magnetoexcitonic recombination indicates a very low value for the hole mass of 0.3m(0) close to the band edge in agreement with theory.
Andras Kis, Dumitru Dumcenco, Olivier Renault, Dmitrii Unuchek, Hokwon Kim, Nicolas Chevalier
Majed Chergui, Marco Grioni, Arnaud Magrez, Helmuth Berger, Philippe Bugnon, Alberto Crepaldi, Luca Moreschini, Simon Karl Moser, Gianmarco Gatti, Serhii Polishchuk
Elison de Nazareth Matioli, Luca Nela, Riyaz Mohammed Abdul Khadar