Microcavity light emitting diodes based on GaN membranes grown by molecular beam epitaxy on silicon
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Gallium nitride (GaN) is one of the most interesting materials for devices applications such as blue light emitting diodes, laser diodes and high power and high temperature electronic applications, because of its large band gap (3.39 eV). Several growth te ...
Limitations in extraction efficiency of gallium nitride (GaN) photonic crystal (PhC) light emitting diodes (LEDs) are addressed by implementing an LED design using both two-dimensional PhCs in-plane and index guiding layers (IGLs) in the vertical direction ...
The authors report a technique for selective wet chemical etching of an AlInN sacrificial layer lattice-matched to GaN for the fabrication of air-gap photonic structures. It is used to demonstrate high quality factor (Q) microdisk cavities. Whispering gall ...
Highly sensitive photodetectors for the mid-infrared have recently been obtained by placing a photodiode inside a Fabry-Pérot cavity (Arnold et al 2005 Appl. Phys. Lett. 87 141103). These resonant cavity enhanced detectors (RCED) are sensitive at the res ...
The mid-infrared range is of interest in spectroscopic applications, due to the large number of organic compounds that exhibit characteristic absorption bands in this spectral region. Semiconductor technology, however, has been developed mainly for the nea ...
In the past decades, III-nitride semiconductor compounds have attracted an increasing amount of interest due to their applications to blue-violet laser diodes and white light emitting diodes, or for their use as ultraviolet emitting devices for biomedical ...
Forward and reverse leakage currents in GaN/InGaN multi-quantum well light-emitting diodes (LEDs) are caused by reactive-ion etching (RIE) damages during device patterning. A method to recover the damaged surfaces, based on a chemical etch in KOH: ethylene ...
A quantum dot is a semiconductor nanostructure that confines the motion of conduction band electrons and valence band holes in all three spatial directions, thus creating fully discrete energy levels. The confinement in the InAs/GaAs material system is gen ...
The authors report on InGaN microcavity light-emitting diodes with an effective thickness of similar to 450 nm at the emission wavelength of similar to 415 nm. The starting material for the flip-chip laser lift-off device is a structure with an active regi ...
Highly sensitive photodetectors for the mid infrared have been obtained by placing a photodiode inside a Fabry Perot cavity. These resonant cavity enhanced detectors (RCED) are sensitive at the resonances only, which depend on the distance between the two ...