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Growth temperatures between 450 and 520 degrees C and V/III ratios of 2-8 were explored to optimize the crystalline quality and the transport properties of compressively strained InxGa1-xAs/InP heterostructures (0.53 < x < 1). 77 K Hall mobilities as high ...
The purpose of this work is to compare for thin film analysis, atomic force microscopy, a recently emerging tool, with well-established nuclear analysis techniques. The comparison is conducted using typical samples of InAs/GaAs heterostructures grown by mo ...
Discommensurations (DC) and domains in incommensurate charge density wave (CDW) states of the quasi-two-dimensional (PO2)4(WO3)2m (m = 12) bronze have been observed directly by dark-field transmission electron microscopy with use of the CDW satellite refl ...
GaAs/AlxGa1-xAs multiple-quantum-well (MQW) structures with identical well thicknesses but with different Al contents x in the barrier (x almost-equal-to 0.1, 0.2, 0.45, and 1) were grown by molecular-beam epitaxy to study the impurity-induced disordering ...
Surface segregation processes during the growth of Ga0.5In0.5P/GaAs heterostructures by chemical beam epitaxy have been investigated in real time using reflection high-energy electron diffraction (RHEED). It is shown that In segregation occurs at both GaIn ...
A review of experimental results obtained by different techniques is presented on the problem of zinc diffusion. Zinc diffusion was carried out on Si-doped GaAs (n almost-equal-to 10(18) cm-3) and on multiple quantum well (MQW) structures. The samples were ...
We have studied the effect of growth interruptions on 2 monolayer thick InAs/InP strained quantum wells (QWS) grown by chemical beam epitaxy. The main feature is the formation of up to 8 monolayer thick InAs islands during As, annealing of the QW. Their fo ...
Sand erosion tests were performed on WC-Co and WC-CoCr coatings deposited by the high velocity oxy-fuel spraying method. Several analytical techniques, including X-ray diffraction, Auger electron spectroscopy and energy-dispersive spectroscopy in a transmi ...
GaAlAs/GaAs and GaInAs/InP thick layers, single and multiple quantum wells were grown by atmospheric pressure metalorganic vapor phase epitaxy. Auger electron spectroscopy, wedge transmission electron microscopy, x-ray diffraction, low-temperature photolum ...
Characterization of impurety diffusion induced disordering in GaAs/AlGaAs multiquantum well structures, grown by molecular beam epitaxy, has been carried out by scanning electron microscopy. ...
