Publication

Al0.83In0.17N lattice-matched to GaN used as an optical blocking layer in GaN-based edge emitting lasers

Related publications (34)

Study of growth-induced point defects and their impact on InGaN-based optoelectronic devices

GaN exhibits a decomposition tendency for temperatures far below its melting point and common growth temperatures used in metal-organic vapour phase epitaxy (MOVPE).This characteristic is known to be a major obstacle for realising GaN bulk substrate. There ...

EPFL2024

Single-frequency violet and blue laser emission from AlGaInN photonic integrated circuit chips

Tobias Kippenberg, Anat Siddharth

Chip-based, single-frequency and low phase-noise integrated photonic laser diodes emitting in the violet (412 nm) and blue (461 nm) regime are demonstrated. The GaN-based edge-emitting laser diodes were coupled to high-quality on-chip micro-resonators for ...

Optica Publishing Group2023

GaN vertical power devices on silicon substrates

Riyaz Mohammed Abdul Khadar

Gallium Nitride (GaN) is a wonder material which has widely transformed the world by enabling energy-efficient white light-emitting diodes. Over the past decade, GaN has also emerged as one of the most promising materials for developing power devices which ...

EPFL2021

III-nitride photonic cavities

Nicolas Grandjean, Raphaël Butté

Owing to their wide direct bandgap tenability, III-nitride (III-N) compound semiconductors have been proven instrumental in the development of blue light-emitting diodes that led to the so-called solid-state lighting revolution and blue laser diodes that a ...

WALTER DE GRUYTER GMBH2020

Light-Matter Interaction in III-Nitride Waveguides: Propagating Polaritons and Optical Gain

Joachim Armand Simonne Ciers

III-nitride waveguides featuring AlInN claddings and GaN/AlGaN quantum wells (QWs) offer promising perspectives for applications in many fields of short-wavelength photonics. Thanks to their nearly lattice-matched nature, these structures exhibit an excell ...

EPFL2018

InGaN laser diode with metal-free laser ridge using n(+)-GaN contact layers

Nicolas Grandjean, Antonino Francesco Castiglia, Marco Malinverni, Marco Rossetti, Denis Martin

We report on InGaN edge emitting laser diodes with a top metal electrode located beside the laser ridge. Current spreading over the ridge is achieved via a highly doped n(+)-type GaN layer deposited on top of the structure. The low sheet resistance of the ...

Iop Publishing Ltd2016

GaN-based photonic crystal cavities on silicon for visible and near infrared applications

Noelia Vico Triviño

Photonic crystal (PhC) cavities combine ultra-high quality (Q) factors with small mode volumes, resulting in an enhancement of the light-matter interaction at the nanoscale, which, beyond fundamental studies is advantageous for countless applications in ph ...

EPFL2015

Optimization of NH₃-MBE grown p-doped (Al)GaN layers and their implementation in long wavelength laser diodes and tunnel junctions

Marco Malinverni

Over the last two decades III-nitride optoelectronic devices have experienced an impressive evolution in terms of performance. However, their potential is far from being fully exploited. Although they offer bandgaps from the deep UV to the infrared spectra ...

EPFL2015

InGaN alloys and heterostructures

Marlene Glauser

The III-nitride semiconductor material system - (InAlGa)N - is of highest interest for optoelectronic applications due to its direct bandgap, tunable from the ultraviolet to the infrared spectral range. The most well-known are white light-emitting diodes, ...

EPFL2014

InGaN/GaN quantum wells for polariton laser diodes: Role of inhomogeneous broadening

Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Eric Feltin, Georg Rossbach, Marlene Glauser, Christian Mounir

Contrary to the case of III-nitride based visible light-emitting diodes for which the inhomogeneous linewidth broadening characteristic of InGaN-based multiple quantum well (MQW) heterostructures does not appear as a detrimental parameter, such a broadenin ...

Amer Inst Physics2014

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