HIGH-SPEED INP/GAINAS METAL-SEMICONDUCTOR-METAL PHOTODETECTORS GROWN BY CHEMICAL BEAM EPITAXY
Related publications (41)
Graph Chatbot
Chat with Graph Search
Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.
DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.
The purpose of this work is to compare for thin film analysis, atomic force microscopy, a recently emerging tool, with well-established nuclear analysis techniques. The comparison is conducted using typical samples of InAs/GaAs heterostructures grown by mo ...
In order to delay the occurrence of the 2D-3D growth mode transition in highly strained InxGa1-xAs epitaxial layers grown on GaAs (001) by molecular beam epitaxy, the mass transport at the surface should be reduced. This can be achieved by increasing the g ...
Solar blind detectors based on AlGaN grown by Molecular Beam Epitaxy and Metal Organic Vapor Phase Epitaxy have been fabricated and characterized. Metal Semiconductor Metal (MSM) detectors and vertical Schottky detectors have been realized, with a design t ...
We studied the deposition of Au, In, Ag, and Al overlayers onto clean-cleaved GaTe(001) surfaces at room temperature by x-ray photoelectron spectroscopy. Gold and In overlayers did not produce evidence of chemical reactions, and neither with cation nor ani ...
This thesis deals with the monolithic integration of long wavelength (1.3-1.55 µm) p-i-n photodiodes with HEMT field effect transistors for the realization of wide bandwidth OEIC receivers for lightwave communication systems. Part of this work was carried ...
When a growth interruption is applied to the top interface of a nominally 3 monolayers (ML) thick InAs quantum well (QW), grown on an InP substrate, the InAs layer relaxes by formation of three-dimensional (3D) islands. The emission from the QW is split in ...
High strained InxGa1-xAs/GaAs quantum well (QW) structures have been grown by metalorganic molecular beam epitaxy (MOMBE) with the aim of investigating the capability of this epitaxial growth method in terms of thickness control. Emission lines from QWs wi ...
We report the growth behaviour of InP, InGaAs and InGaAsP on non-planar InP substrates where ridges were formed with (111)A, (211)A, (111)B and (551BAR) sidewall planes. All three materials grow uniformly on the whole patterned surface with (111)A and (211 ...
We studied the influence of the indium composition y, growth temperature T(s) and InGaAs quantum-well channel thickness d(ch) on the 300 and 77 K Hall electrical properties of pseudomorphic modulation doped field effect transistor (MODFET)-type heterostruc ...
We have studied the indium and gallium incorporation during growth by chemical beam epitaxy of GaInAs, GaInP and GaInAsP alloys. TMIn, TEGa, cracked AsH3 and PH3 sources were used. The indium incorporation ratio remains nearly constant over the range of pa ...