High-Mobility AlGaN/GaN Two-Dimensional Electron Gas Heterostructure Grown on (111) Single Crystal Diamond Substrate
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The growing research on two-dimensional materials reveals their exceptional physical properties and enormous potential for future applications and investigation of advanced physics phenomena. They represent the ultimate limit in terms of active channel thi ...
This thesis is dedicated to the growth and characterization of the optoelectronic properties of III-V semiconductor nanostructures namely nanowires and nanoscale membranes. III-V semiconductors possess promising intrinsic properties like direct band gap, h ...
Two-dimensional (2D) semiconductors, consisting of single-sheets of layered transition metal dichalcogenides (TMD), are attracting enormous interest from both fundamental science and technology. Monolayer molybdenum disulfide (MoS2), a typical example from ...
This work consists in an experimental study of the main parameters governing the transport of heat across an interface between two solids, when it is dominated by phonons. The main experimental tool used is Time-Domain ThermoReflectance (TDTR), which is an ...
Two-dimensional (2D) semiconductors such as single- and few-layer molybdenum disulphide(MoS2) are promising building blocks for prospect flexible, transparent and low power electronics. Due to an electronic bandgap of the order of ~1.8 eV and atomic-scale ...
In many semiconductor technologies, including GaN, the lack of p-channel devices is a major obstacle for complementary operations. Here, we demonstrate high-performance polycrystalline diamond p-channel transistors on GaN-on-Si. Following the optimization ...
GaN based electronic devices have progressed rapidly over the past decades and are nowadays starting to replace Si and classical III-V semiconductors in power electronics systems and high power RF amplifiers. AlGaN/GaN heterostructures have been, until rec ...
The Almahata Sitta MS-170 ureilite (a piece of a breccia originating from the asteroid, 2008 TC3) consists mainly of olivine, with many diamond and graphite grains existing between the olivine grains. The occurrences of the diamonds are unique; i.e., (i) s ...
Thermal boundary conductance (TBC) of the Ag/diamond and Au/diamond interfaces with a nanometer-thick interface layer of either nickel or molybdenum is measured by time domain thermoreflectance and modeled based on a 3-layer two-temperature model (3l-TTM). ...
[100] and [111] oriented diamond substrates were treated using Ar:H and Ar:O plasma treatments, and 1:1 HNO3:H2SO4 heated at 200 ̊C. Subsequent to these treatments, an aluminum layer was either evaporated or sputte- red on the substrates. The Thermal Bound ...