TEMPERATURE-DEPENDENCE OF THE INP BAND-GAP FROM A PHOTOLUMINESCENCE STUDY
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Using hybrid density functionals, we investigate the origin of the large band gap experimentally observed at the 6H-SiC(0001) surface when passivated by an epitaxial silicon oxynitride layer. In order to distinguish the effects resulting from the interfaci ...
A quantum dot is a semiconductor nanostructure that confines the motion of conduction band electrons and valence band holes in all three spatial directions, thus creating fully discrete energy levels. The confinement in the InAs/GaAs material system is gen ...
We have directly measured the carrier temperature in semiconductor optical amplifiers (SOAs) via spontaneous emission and we demonstrate an unexpectedly high carrier temperature. The direct correlation of the temperature increase with the carrier density s ...
InP films have been deposited on amorphous sapphire substrate by means of the metallorganic chemical vapour deposition technique with and without PH3/H-2 plasma preactivation. Polycrystalline materials, having average grain sizes of about 40 nm, which, how ...
Thermally detected optical absorption (TDOA) and photoluminescence experiments are carried out on In0.16Ga0.84N/GaN multi-quantum wells (MQWs) grown by molecular beam epitaxy on (0001) sapphire substrates. A model proposed to adjust the TDOA line shape, al ...
We have analyzed the photoresponse of solar blind AlGaN Schottky barrier photodiodes below the alloy band gap energy, in the 3.5-4.5 eV range, and we show that it is dominated by internal photoemission. The n-type Schottky barrier height is shown to increa ...
The magneto-luminescence of GaN/AlGaN quantum wells in fields up to 52 T shows a field dependence that is strongly dependent on the well width. Strong redshifts are seen for the narrowest wells that are attributed to a Zeeman splitting. This is unexpected, ...
We report on the growth by metalorganic vapor phase epitaxy of high-quality Al1-xInxN layers and AlInN/GaN Bragg mirrors near lattice matched to GaN. Layers are grown on a GaN buffer layer with no cracks over full 2 in. sapphire wafers. The index contrast ...
We report x-ray photoelectron spectroscopy experimental results on band offsets at Ge/Si(100)2 x 1 interfaces grown by hydrogen and Sb-surfactant mediated epitaxy. For Ge deposited at 400 degrees C in Si(100)2 x 1, the valence band discontinuity was of 0.7 ...
The optical properties of high-quality V-groove GaAs/AlxGa1-xAs quantum wires have been investigated using low-temperature photoluminescence (PL) and photoluminescence excitation (PLE) techniques. We systematically study the evolution of PL and PLE spectra ...