Publication

Strain relaxation of AlN epilayers Stranski-Krastanov GaN/AlN quantum dots grown by organic vapor phase epitaxy

Related publications (45)

Indium surfactant effect on AlN/GaN heterostructures grown by metal-organic vapor-phase epitaxy: Applications to intersubband transitions

Nicolas Grandjean, Jean-François Carlin, Marc Ilegems, Eric Feltin, Sylvain Nicolay, Mauro Mosca

We report on a dramatic improvement of the optical and structural properties of AlN/GaN multiple quantum wells (MQWs) grown by metal-organic vapor-phase epitaxy using indium as a surfactant. This improvement is observed using photoluminescence as well as x ...

2006

Stress control in GaN/sapphire templates for the fabrication of crack-free thick layers

Nicolas Grandjean, Marc Ilegems, Denis Martin

The reduction of the tensile stress contained in GaN layers grown oil sapphire by metalorganic vapor phase epitaxy (MOVPE) is achieved using a low density of initial GaN crystallites. The template layers exhibit a significant reduction in dislocation densi ...

2006

Stranski-Krastanov GaN/AlN quantum dots grown by metal organic vapor phase epitaxy

Nicolas Grandjean, Jean-François Carlin, Marc Ilegems, Raphaël Butté, Eric Feltin, Dobri Simeonov

We report a thorough study of the growth of self-assembled GaN/AlN quantum dots (QDs). These QDs were grown on sapphire substrates using the Stranski-Krastanov (SK) growth mode by means of low-pressure metal organic vapor phase epitaxy. The influence of th ...

2006

High quality thin GaN templates grown by hydride vapor phase epitaxy on sapphire substrates

Nicolas Grandjean, Marc Ilegems, Raphaël Butté, Denis Martin

The growth by hydride vapor phase epitaxy (HVPE) of high quality thin GaN layers (d=8 mu m) on c-plane sapphire substrates with dislocation densities lower than 2x10(8) cm(-2) is demonstrated using a two-step process similar to that of metal organic vapor ...

2006

Correlation between optical properties and interfaces morphology of GaAs/AlGaAs quantum wells

Elyahou Kapon, Alok Rudra, Daniel Oberli, Nicolas Moret

We investigate the embedded interfaces of GaAs/AlGaAs quantum wells grown by metal organic vapor phase epitaxy on slightly (< 1 degrees)-misoriented (001) substrates using selective etching and atomic force microscopy. Depending on the substrate misorienta ...

American Institute of Physics2006

Progress in AlInN-GaN Bragg reflectors: Application to a microcavity light emitting diode

Jean-François Carlin, Marc Ilegems, Julien Dorsaz

We report on the progress in the growth of highly reflective AlInN-GaN distributed Bragg reflectors deposited by metalorganic vapor phase epitaxy. Al1-xInxN layers with an In content around x similar to 0.17 are lattice-matched to GaN, thus avoiding strain ...

2005

InGaN/GaN resonant-cavity LED including an AlInN/GaN bragg mirror

Jean-François Carlin, Marc Ilegems, Julien Dorsaz

We report on the growth by metalorganic vapor phase epitaxy of a InGaN/GaN resonant-cavity light emitting diode (RCLED) emitting at 454 nm and incorporating a 12-pair Al0.82In0.18N/GaN distributed Bragg reflector as bottom mirror. A(1-x)In(x)N layers with ...

2004

Comparison of the In distribution in InGaN/GaN quantum well structures grown by molecular beam epitaxy and metalorganic vapor phase epitaxy

Nicolas Grandjean

We have compared the In distribution in InGaN quantum wells grown by molecular beam epitaxy (MBE) and metalorganic vapor phase epitaxy (MOVPE). The samples were studied by conventional and high-resolution transmission electron microscopy (HRTEM). The local ...

2004

Epitaxial laser treatment of single crystal nickel-base superalloys

Sélim Mokadem

The continued drive for increased efficiency, performance and reduced costs for aircraft and industrial gas turbines demands extended use of high temperature materials, such as single crystal nickel based superalloys. The cost for hot section components us ...

EPFL2004

In distribution in InGaN quantum wells: influence of phase separation, In segregation and In desorption

Nicolas Grandjean

The local In distribution in InGaN quantum wells was measured in samples which were grown by metalorganic vapor phase epitaxy (MOVPE) and molecular beam epitaxy (MBE) varying systematically the metal-flux ratio and the growth rate. The composition analyses ...

IOP2003

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