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GaN-based laser diodes including a lattice-matched Al0.83In0.17N cladding layer

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GaN-based laser diodes including a lattice-matched Al0.83In0.17N cladding layer

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Recombination coefficients of GaN-based laser diodes

Emission characteristics of GaN-based blue lasers including a lattice matched Al0.83In0.17N optical blocking layer for improved optical beam quality

Characterization of a-plane grown GaN on sapphire substrates by electron microscopy

Al0.83In0.17N lattice-matched to GaN used as an optical blocking layer in GaN-based edge emitting lasers

Non-polar GaN epilayers and heterostructures for photonic applications

Physics and applications of intersubband transitions in nitride based heterostructures

Realization and study of InAs/GaAs quantum dot superluminescent diodes emitting at 1.3µm

Visible InGaN/GaN quantum-dot materials and devices

Lattice-matched AlInN alloys for nitride-based optoelectronic devices

Optical properties of In(Ga)As/GaAs quantum dot-based devices emitting at 1.3[mu]m