Dynamic random-access memoryDynamic random-access memory (dynamic RAM or DRAM) is a type of random-access semiconductor memory that stores each bit of data in a memory cell, usually consisting of a tiny capacitor and a transistor, both typically based on metal–oxide–semiconductor (MOS) technology. While most DRAM memory cell designs use a capacitor and transistor, some only use two transistors. In the designs where a capacitor is used, the capacitor can either be charged or discharged; these two states are taken to represent the two values of a bit, conventionally called 0 and 1.
Optical discAn optical disc is a flat, usually disc-shaped object that stores information in the form of physical variations on its surface that can be read with the aid of a beam of light. Optical discs can be reflective, where the light source and detector are on the same side of the disc, or transmissive, where light shines through the disc to the be detected on the other side. Optical discs can store analog information (e.g. Laserdisc), digital information (e.g. DVD), or store both on the same disc (e.g. CD Video).
Computer data storageComputer data storage is a technology consisting of computer components and recording media that are used to retain digital data. It is a core function and fundamental component of computers. The central processing unit (CPU) of a computer is what manipulates data by performing computations. In practice, almost all computers use a storage hierarchy, which puts fast but expensive and small storage options close to the CPU and slower but less expensive and larger options further away.
Die (integrated circuit)A die, in the context of integrated circuits, is a small block of semiconducting material on which a given functional circuit is fabricated. Typically, integrated circuits are produced in large batches on a single wafer of electronic-grade silicon (EGS) or other semiconductor (such as GaAs) through processes such as photolithography. The wafer is cut (diced) into many pieces, each containing one copy of the circuit. Each of these pieces is called a die. There are three commonly used plural forms: dice, dies, and die.
Row hammerRow hammer (also written as rowhammer) is a security exploit that takes advantage of an unintended and undesirable side effect in dynamic random-access memory (DRAM) in which memory cells interact electrically between themselves by leaking their charges, possibly changing the contents of nearby memory rows that were not addressed in the original memory access. This circumvention of the isolation between DRAM memory cells results from the high cell density in modern DRAM, and can be triggered by specially crafted memory access patterns that rapidly activate the same memory rows numerous times.
Memory cell (computing)The memory cell is the fundamental building block of computer memory. The memory cell is an electronic circuit that stores one bit of binary information and it must be set to store a logic 1 (high voltage level) and reset to store a logic 0 (low voltage level). Its value is maintained/stored until it is changed by the set/reset process. The value in the memory cell can be accessed by reading it. Over the history of computing, different memory cell architectures have been used, including core memory and bubble memory.
Static random-access memoryStatic random-access memory (static RAM or SRAM) is a type of random-access memory (RAM) that uses latching circuitry (flip-flop) to store each bit. SRAM is volatile memory; data is lost when power is removed. The term static differentiates SRAM from DRAM (dynamic random-access memory) — SRAM will hold its data permanently in the presence of power, while data in DRAM decays in seconds and thus must be periodically refreshed.
Orbital angular momentum of lightThe orbital angular momentum of light (OAM) is the component of angular momentum of a light beam that is dependent on the field spatial distribution, and not on the polarization. It can be further split into an internal and an external OAM. The internal OAM is an origin-independent angular momentum of a light beam that can be associated with a helical or twisted wavefront. The external OAM is the origin-dependent angular momentum that can be obtained as cross product of the light beam position (center of the beam) and its total linear momentum.
Silicon–germaniumSiGe (ˈsɪɡiː or ˈsaɪdʒiː), or silicon–germanium, is an alloy with any molar ratio of silicon and germanium, i.e. with a molecular formula of the form Si1−xGex. It is commonly used as a semiconductor material in integrated circuits (ICs) for heterojunction bipolar transistors or as a strain-inducing layer for CMOS transistors. IBM introduced the technology into mainstream manufacturing in 1989. This relatively new technology offers opportunities in mixed-signal circuit and analog circuit IC design and manufacture.
Angular momentum of lightThe angular momentum of light is a vector quantity that expresses the amount of dynamical rotation present in the electromagnetic field of the light. While traveling approximately in a straight line, a beam of light can also be rotating (or "spinning, or "twisting) around its own axis. This rotation, while not visible to the naked eye, can be revealed by the interaction of the light beam with matter. There are two distinct forms of rotation of a light beam, one involving its polarization and the other its wavefront shape.
