Porphyrin-based Photocatalytic Nanolithography A NEW FABRICATION TOOL FOR PROTEIN ARRAYS
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We report on the growth and properties of GaN films grown on Si(111) substrates by molecular beam epitaxy using ammonia. The properties of the layers show that our growth procedure is very efficient in order to overcome the difficulties encountered during ...
Conformal epitaxy is an epitaxial growth technique capable of yielding low dislocation density III-V films on Silicon. In this technique, the growth of the m-V material occurs parallel to the silicon substrate, from the edge of a previously deposited III-V ...
Using Grazing-incidence small-angle scattering (GISAXS) technique we investigated the surface morphology of polymer films spin-coated on different silicon substrates. As substrates we used either technologically smooth silicon wafers or the same silicon wa ...
We study the interfacial electronic properties of a model Si-SiO2-Si structure which is intended to simulate the substrate-oxide-polysilicon stack in metal-oxide-semiconductor devices. The structural properties of this model are shown to match closely thos ...
Polymeric precursor solution (Pechini method) was used to deposit LiNbO3 thin films by spin-coating on (100) silicon substrates. X-ray diffraction data of thin films showed that the increase of oxygen flow promotes a preferred orientation of (001) LiNbO3 p ...
The performance of many silicon devices is limited by electronic recombination losses at the crystalline silicon (c-Si) surface. A proper surface passivation scheme is needed to allow minimizing these losses. The surface passivation properties of amorphous ...
Silicon dioxide (SiO2) films grown on silicon monocrystal (Si) substrates form the gate oxides in current Si-based microelectronics devices. The understanding at the atomic scale of both the silicon oxidation process and the properties of the Si(100)-SiO2 ...
A bulk GaN half-wave (lambda /2) cavity is grown on Si(Ill) substrate by molecular beam epitaxy. It is embedded between twelve AlN/(Al,Ga)N quaterwave stacks and the silicon substrate, which acts as a metallic bottom mirror in the investigated wavelength r ...
A micro-hotplate device, useful in catalytic high-temperature chemical sensors, micro-chemical reactors and as infra-red source, in particular at temperatures above 600 DEG C, comprises a thin film resistive heater (1) made of a refractory metal silicide s ...
We have designed and realised a new type of microsystem for the electrical characterisation of arrays of living cells for biomedical diagnostic purposes. We have used deep plasma etching for the fabrication of microholes and micro-fluidic channels in silic ...