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Conformal epitaxy is an epitaxial growth technique capable of yielding low dislocation density III-V films on Silicon. In this technique, the growth of the m-V material occurs parallel to the silicon substrate, from the edge of a previously deposited III-V seed, the vertical growth being stopped by an overhanging capping layer. As an example, conformal GaAs layers on Silicon, presenting dislocation densities below 10(5)cm(-2), have been obtained using selective vapor phase epitaxy. These layers have then been used as high quality GaAs on Si substrates for subsequent vertical MBE regrowth of active structures.
Elison de Nazareth Matioli, Alessandro Floriduz
Sandro Carrara, Diego Ghezzi, Gian Luca Barbruni