Physics of the Ultrafast Dynamics of Excitons in GaN Nanostructures
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We present an experimental and theoretical study of the size dependence of the coupling between electron-hole pairs and longitudinal-optical phonons in Ga1-xInxN/GaN-based quantum wells and quantum boxes. We found that the Huang-Rhys factor S, which determ ...
Extended X-ray absorption fine structure (EXAFS) above the In K-edge of luminescent InGaN heterostructures provides a unique probe of local structure on an atomic length scale. Through a process of fitting the experimental spectrum, we can refine a model o ...
We report the direct observation of one-dimensional (ID) excitonic molecules (biexcitons) in high quality disorder free semiconductor quantum wires. By means of spatially resolved near-field photoluminescence spectroscopy, we detected delocalized 1D excito ...
We have studied the influence of hydrostatic pressure on the light emission from a strained GaN/AlGaN multiquantum well system. We have found that the pressure coefficients of the photoluminescence peak energies are dramatically reduced with respect to tha ...
Multicolor, multi-quantum well light emitting diodes have been fabricated by molecular beam epitaxy by inserting quantum wells of various widths in the active region. The In content of the wells is 15%-20% and the color is governed by carrier confinement a ...
Exciton reflectivity from GaN/AlxGa1-xN quantum wells (QWs) shows broad peaks that are difficult to analyze within a conventional single-free-exciton model. We have applied a new formalism that allows us to separate numerically radiative and inhomogeneous ...
GaN/Al0.1Ga0.9N quantum wells (QWs) are grown by molecular beam epitaxy on (0001) sapphire and (0001) GaN single-crystal substrates. Their optical properties are investigated by temperature-dependent photoluminescence (PL). Ar room temperature, the integra ...
Influence of hydrostatic pressure on the light emission from strained GaN/AlGaN multi-quantum-well systems has been studied, Pressure coefficients of the photoluminescence peak energies show a strong reduction with respect to that of the GaN energy ? ap an ...
The invention concerns a electroluminescent device with a multilayer structure comprising: i) a first electrode including a layer, consisting of a transparent or translucent conductive material selected among metal oxides and metal nitrides, said layer bei ...
The emission properties of self-assembled InAs quantum dots (QDs) and lattice-matched GaInNAs quantum wells (QWs) emitting around 1.3 mum were investigated by temperature-dependent and time-resolved photoluminescence (PL). The QDs have much higher PL effic ...