Physics of the Ultrafast Dynamics of Excitons in GaN Nanostructures
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Impact ionization of exciton states in epitaxial GaN films and GaN/AlGaN quantum-well structures was studied. The study was done using an optical method based on the observation of exciton photoluminescence quenching under application of an electric field. ...
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We report the observation of confined modes in the mixed photon/exciton-like branches of exciton-polaritons propagating along the growth axis of a 700 nm-thick GaN film, deposited by Molecular Beam Epitaxy on bulk GaN substrates. The energies of the confin ...
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We report on efficient, narrow linewidth exciton recombination in GaAs/AlGaAs V-groove quantum wire light-emitting diodes at room temperature. The high efficiency is due to a selective carrier injection mechanism resulting in an estimated internal quantum ...
We have studied experimentally the radiative lifetimes of negatively charged excitons (X-) and neutral excitons (X) in GaAs and CdTe quantum wells. Despite the different optical properties (e.g. trion binding energies) and the different quantum well struct ...
Previous experimental studies have allowed us to observe peculiar localization effects of excitons in GaN/AlGaN quantum wells grown by MBE, as well as efficient nonradiative inter-well carrier transfers. In this work, we use the envelope-function approxima ...
We report on the experimental observation of excitonic molecules (biexcitons) in high-quality V-shaped quantum wires. By means of spatially resolved near-field photoluminescence spectroscopy, first we unambiguously isolate excitons with a one-dimensional c ...
