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A method is presented that allows the definition of micrometer- and submicrometer-sized implanted structures in silicon without using photoresist patterning. The process is based on the use of stencils as masks in a conventional ion implanter, and is tested for both phosphorus and arsenic ions. Electrical characterization confirms the activation of the impurities in the implanted zones whereas topological characterization shows minimum dimensions of 110 nm with an increase in dimensions compared to stencil apertures that is dominated by backscattering of the ions during implantation
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