A double-gate (DG) fin field effect transistor (FinFET) is discussed as new label-free ion and biological sensor. Simulations as function of channel doping, geometrical dimensions, operation point and materials investigated the device response to an external potential difference which provides a body threshold voltage modulation. The simulation results presented in this work clearly state the key features for an ultrasensitive FET based sensor: an enhancement low doped and partially gated transistor operating in weak-moderate inversion regime. The optimized sensitivity, obtained when the width of the fin is equal to the gate height (W-NW similar to h(g)), reaches a value of 85% for an extraction current, I-d, of 0.1 mu A. These results pave the way for the fabrication process of an innovative CMOS compatible sensing system. (C) 2011 Elsevier B.V. All rights reserved.
Elison de Nazareth Matioli, Luca Nela, Taifang Wang
Mihai Adrian Ionescu, Kirsten Emilie Moselund, Clarissa Convertino