Determination of the band gap and the split-off band in wurtzite GaAs using Raman and photoluminescence excitation spectroscopy
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Room-temperature photoreflectance spectroscopy is performed on a series of GaN-AlGaN quantum wells grown by molecular beam epitaxy. We show that the potentialities of this powerful investigation method previously demonstrated on many low-dimensional system ...
Ammonia is used for growing undoped GaN layers by gas source molecular-beam epitaxy on c-plane sapphire substrates. The growth mode is layer by layer as shown by the observation of reflection high-energy electron diffraction intensity oscillations. The str ...
A set of parameters for the temperature dependence of the direct band gap of InP has been determined by fitting the excitonic recombination energy in the photoluminescence (PL) spectra between 2 and 250 K. We have used high-quality InP samples grown by che ...
Room‐temperature photoreflectance (PR) measurements have been used to investigate the optical transition energies in InxGa1−xAs/GaAs strained layer superlattice structures grown by molecular‐beam epitaxy (MBE). Sharp PR features indicating excellent optica ...
