Determination of the band gap and the split-off band in wurtzite GaAs using Raman and photoluminescence excitation spectroscopy
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We report on Raman scattering in hexagonal GaN quantum wells embedded in Al0.11Ga0.89N barriers, The six monolayers thick quantum wells, grown by molecular beam epitaxy, are deposited on a GaN buffer layer. Resonant enhancement of the Raman lines associate ...
GaInN/GaN heterostructures have been grown by molecular beam epitaxy (MBE) on c-plane sapphire substrates. The growth of Ga1-xInxN (x > 12%) alloy has been extensively studied. At low V/III ratio, the growth undergoes a Stranski-Krastanov transition giving ...
Thermally detected optical absorption (TDOA) and photoluminescence (PL) experiments are performed at 0.35 and 4 K, respectively, on InxGa1-xN(x less than or equal to 0.12) layers grown on GaN by molecular beam epitaxy. The modelling of absorption allows us ...
We report on the epitaxial growth of high quality GaN films on Si(111) substrates by molecular beam epitaxy using ammonia. The surface morphology and crystallinity of thick undoped GaN films are characterized by reflection high-energy electron diffraction ...
InGaN/GaN quantum wells (QWs) were grown by molecular-beam epitaxy on c-plane sapphire substrates. The growth of InGaN is carried out at 550 degrees C with a large V/III ratio to counteract the low efficiency of NH3 at that temperature and to promote the t ...
AlGaN/GaN quantum well (QWs) were grown on (0001) sapphire substrates by molecular beam epitaxy (MBE) using ammonia as nitrogen precursor. The Al composition in the barriers was varied between 8 and 27 % and the well thickness from 4 to 17 monolayers (MLs, ...
The growth of InGaN layers was carried out by molecular beam epitaxy (MBE). The nitrogen precursor was ammonia. The optical and structural properties of the InGaN layers have been investigated by transmission electron microscopy (TEM), x-ray diffraction (X ...
We have investigated the thermal stability of GaN using Raman scattering, Noninvasive optical monitoring of the degradation of GaN during high-temperature processing has been demonstrated. GaN samples grown by molecular-beam epitaxy (MBE) and metalorganic ...
Wurtzite AlGaN/GaN quantum well (QW) structures were grown by molecular beam epitaxy on c-plane sapphire substrates and the QW transition energies were measured by low temperature photoluminescence. Both the well widths and the Al mole fraction in the AlxG ...
Picosecond time-resolved photoluminescence is used to investigate the recombination dynamics of excitons in samples which ail contain four GaN-AlxGa1-xN quantum wells of respective widths of 4, 8, 12 and 16 molecular monolayers, grown by molecular beam epi ...
