Bias-dependent absorption coefficient of the absorber section in GaN-based multisection laser diodes
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The influence of hydrostatic pressure on the emission and absorption spectra measured for various types of InGaN structures (epilayers, quantum wells, and quantum dots) is studied. While the known pressure coefficients of the GaN and InN band gaps are abou ...
By using chemical beam epitaxy at growth temperatures as low as 460-480 degrees C, we have overcome strain relaxation problems that prevented so far the successful use of InAsP quantum wells in 1.55 mu m lasers. Five quantum well InAsP/InGaAsP horizontal c ...
The present work is devoted to the study of the dynamics of multi-photon processes in semiconductor heterostructures. A time-dependent description is important for understanding in detail the transient response of semiconductors excited by ultrashort optic ...
We demonstrate edge-emitting lasers based on self-assembled InAs quantum dots (QDs) on GaAs substrates. The InAs QDs are embedded in an InGaAs quantum well (QW) to red-shift the lasing transition. The lasers emit at lambda=1.2 mum with threshold current de ...
Spectroscopic measurements on ethylene were performed using a quasi-room-temperature quantum cascade (QC) laser operated in pulsed mode in the 10.3 μm range. Using transmission spectroscopy, a broadening of the ethylene absorption spectrum was observed wit ...
We have performed a study of excitation power-dependent spectra of GaN/AlGaN single quantum wells (QWs). First, the experimental "blueshift" of the emission energy, due to screening of internal piezoelectric fields, was compared with the model calculations ...
By comparing photoluminescence and photo reflectance spectra taken on a series of InGaN-GaN quantum wells grown under identical conditions except the growth time of the InGaN layers, we could monitor the Quantum Confined Stark Effect (QCSE) without changin ...
We report the first successful use, to our knowledge, of InAsP quantum wells for 1.55 mu m wavelength laser emission: 5 quantum well InAsP/InGaAsP horizontal cavity lasers showed 88% internal efficiency, 1.6 cm(-1) losses per well, and 33 A/cm(2) transpare ...
The authors present low voltage barrier p-InP/p-GaAs junctions obtained by localised fusion which facilitates a better evacuation of absorbed gases and native oxides from the fused interface. Using this approach InGaAs/lnGaAsP/InP edge emitting lasers fuse ...
Persistent spectral hole burning is studied for several free-based and metallo-naphthalocyanine derivatives in polymer hosts. These materials exhibit a strong 0-0 absorption band in the region 800 nm matching the wavelength range of most semiconductor diod ...