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Low-Noise Microwave Performance of 0.1 mu m Gate AlInN/GaN HEMTs on SiC

Related publications (51)

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Heterostructure design and field management in III-N high-electron mobility electronic devices

Catherine Erine

III-N family of materials has offered multiple groundbreaking technologies in the field of optoelectronics and high-power radio-frequency (RF) devices. Blue light-emitting diodes (LEDs) have revolutionized low-energy lighting. Gallium nitride (GaN) RF mark ...

EPFL2021

Gallium Nitride (GaN) is one of the most promising materials for high frequency power switching due to its exceptional properties such as large saturation velocity, high carrier mobility, and high breakdown field strength. The high switching frequency of G ...

EPFL2021

Three-Input Gates for Logic Synthesis

Giovanni De Micheli, Mathias Soeken, Dewmini Sudara Marakkalage, Eleonora Testa, Heinz Riener

Most logic synthesis algorithms work on graph representations of logic functions with nodes associated with arbitrary logic expressions or simple logic functions and iteratively optimize such graphs. While recent multilevel logic synthesis efforts focused ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2021

Further Results on Efficient Implementations of Block Cipher Linear Layers

Subhadeep Banik

At the FSE conference of ToSC 2018, Kranz et al. presented their results on shortest linear programs for the linear layers of several well known block ciphers in literature. Shortest linear programs are essentially the minimum number of 2-input xor gates r ...

2021

Reconfigurable Logic Gates Based on Programable Multistable Mechanisms

Simon Nessim Henein, Hubert Pierre-Marie Benoît Schneegans, Ilan Vardi, Mohamed Gamal Abdelrahman Ahmed Zanaty

Binary logic gates are building blocks of computing machines, in particular, electronic computers. One variant is the programable logic gate, also known as the reconfigurable logic gate, in which the logical function implemented can be modified. In this pa ...

ASME2020

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We describe the performance of a new wide area time-gated single-photon avalanche diode (SPAD) array for phasor-FLIM, exploring the effect of gate length, gate number and signal intensity on the measured lifetime accuracy and precision. We conclude that th ...

IOP2020

Wide-Field Time-Gated SPAD Imager for Phasor-Based FLIM Applications

Edoardo Charbon, Claudio Bruschini, Ivan Michel Antolovic, Andrei Ardelean, Arin Can Ülkü

We describe the performance of a new wide area time-gated single-photon avalanche diode (SPAD) array for phasor-FLIM, exploring the e!ect of gate length, gate number and signal intensity on the measured lifetime accuracy and precision. We conclude that the ...

2020

Triboelectric‐TFT Flip‐Flop for Bistable Latching of Dielectric Elastomer Actuators

Danick Briand, Herbert Shea, Rubaiyet Iftekharul Haque, Alexis Pierre Henri Marette, Xiaobin Ji, Ronan Julien Hinchet

A high‐voltage flip‐flop combining two self‐powered soft sensors with a flexible high‐voltage thin film transistor (HVTFT) is reported, and is used to electrically latch dielectric elastomer actuators (DEAs) in zero and high‐strain states. Two touch‐actuat ...

2019

More Results on Shortest Linear Programs

Subhadeep Banik

2019

In alpine skiing, intermediate times are usually measured with photocells. However, for practical reasons, the number of intermediate cells is limited to three⁻four, making a detailed timing analysis difficult. In this paper, we propose and validate a magn ...

2019