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AlGaN-Free Blue III-Nitride Laser Diodes Grown on c-Plane GaN Substrates

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Study of growth-induced point defects and their impact on InGaN-based optoelectronic devices

Yao Chen

GaN exhibits a decomposition tendency for temperatures far below its melting point and common growth temperatures used in metal-organic vapour phase epitaxy (MOVPE).This characteristic is known to be a major obstacle for realising GaN bulk substrate. There ...

EPFL2024

A laser-based ultrasound inspection system comprising an object for inspection (1), a laser device for ultrasound generation (3a), a laser device for ultrasound detection (3b), and a coating arrangement (4) including a laser absorbing layer (4a) disposed o ...

2024

Single-frequency violet and blue laser emission from AlGaInN photonic integrated circuit chips

Tobias Kippenberg, Anat Siddharth

Chip-based, single-frequency and low phase-noise integrated photonic laser diodes emitting in the violet (412 nm) and blue (461 nm) regime are demonstrated. The GaN-based edge-emitting laser diodes were coupled to high-quality on-chip micro-resonators for ...

Optica Publishing Group2023

GaN vertical power devices on silicon substrates

Riyaz Mohammed Abdul Khadar

Gallium Nitride (GaN) is a wonder material which has widely transformed the world by enabling energy-efficient white light-emitting diodes. Over the past decade, GaN has also emerged as one of the most promising materials for developing power devices which ...

EPFL2021

III-Nitride Semiconductor Photonic Nanocavities on Silicon

Ian Michael Rousseau

Optical nanocavities enhance light-matter interaction due to their high quality factors (Q) and small modal volumes (V). The control of light-matter interaction lies at the heart of potential applications for integrated optical circuits, including optical ...

EPFL2018

InGaN laser diode with metal-free laser ridge using n(+)-GaN contact layers

Nicolas Grandjean, Antonino Francesco Castiglia, Marco Malinverni, Marco Rossetti, Denis Martin

We report on InGaN edge emitting laser diodes with a top metal electrode located beside the laser ridge. Current spreading over the ridge is achieved via a highly doped n(+)-type GaN layer deposited on top of the structure. The low sheet resistance of the ...

Iop Publishing Ltd2016

Over the last two decades III-nitride optoelectronic devices have experienced an impressive evolution in terms of performance. However, their potential is far from being fully exploited. Although they offer bandgaps from the deep UV to the infrared spectra ...

EPFL2015

InGaN laser diodes emitting at 500 nm with p-layers grown by molecular beam epitaxy

Nicolas Grandjean, Eric Feltin, Julien Dorsaz, Antonino Francesco Castiglia, Marco Malinverni, Marco Rossetti, Jean-Michel Jacques Lamy, Denis Martin, Lise Lahourcade

We demonstrate hybrid laser diodes by combining n-type layers and an active region grown by metal organic vapor phase epitaxy with p-type layers grown by molecular beam epitaxy. These p-doped layers, grown at 740 degrees C, exhibit state-of-the-art electri ...

Japan Society of Applied Physics2015

GaN-based photonic crystal cavities on silicon for visible and near infrared applications

Noelia Vico Triviño

Photonic crystal (PhC) cavities combine ultra-high quality (Q) factors with small mode volumes, resulting in an enhancement of the light-matter interaction at the nanoscale, which, beyond fundamental studies is advantageous for countless applications in ph ...

EPFL2015

InGaN alloys and heterostructures

Marlene Glauser

The III-nitride semiconductor material system - (InAlGa)N - is of highest interest for optoelectronic applications due to its direct bandgap, tunable from the ultraviolet to the infrared spectral range. The most well-known are white light-emitting diodes, ...

EPFL2014