Publication

Infrared Conductivity of Elemental Bismuth under Pressure: Evidence for an Avoided Lifshitz-Type Semimetal-Semiconductor Transition

Related publications (36)

Bi2Te3-xSex series studied by resistivity and thermopower

We study the detailed temperature and composition dependence of the resistivity, rho(T), and thermopower, S(T), for a series of layered bismuth chalcogenides Bi2Te3-xSex, and report the stoichiometry dependence of the optical band gap. In the resistivity o ...

Epl Association, European Physical Society2014

Electron and Hole Mobilities in Single-Layer WSe2

Andras Kis, Adrien Victor Allain

Single-layer transition metal dichalcogenide WSe2 has recently attracted a lot of attention because it is a 2D semiconductor with a direct band gap. Due to low doping levels, it is intrinsic and shows ambipolar transport. This opens up the possibility to r ...

Amer Chemical Soc2014

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Electrodeposited bismuth telluride (Bi2Te3) nanowires using anodic alumina (AAO) templates show anisotropic thermal properties in a direction parallel and perpendicular to the nanowire/nanochannel axis. The present study reports thermal diffusivity measure ...

Elsevier Science Bv2014

Correlations and renormalization of the electron-phonon coupling in the honeycomb Hubbard ladder and superconductivity in polyacene

Ronny Thomale

We have performed extensive density matrix renormalization group (DMRG) studies of the Hubbard model on a honeycomb ladder. The band structure (with Hubbard U = 0) exhibits an unusual quadratic band touching at half-filling, which is associated with a quan ...

Amer Physical Soc2013

Temperature-dependent electron-phonon coupling in La_{2−x}Sr_{x}CuO_{4} probed by femtosecond x-ray diffraction

Majed Chergui, Henrik Moodysson Rønnow, Fabrizio Carbone, Paul Beaud, Krunoslav Prsa, Giulia Fulvia Mancini, Mathieu Julien Gino Cottet, Kazimierz Conder

The strength of the electron-phonon coupling parameter and its evolution throughout a solid's phase diagram often determines phenomena such as superconductivity, charge- and spin-density waves. Its experimental determination relies on the ability to distin ...

Amer Physical Soc2013

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Electrochemical impedance spectroscopy is used to identify a slow electron transport process in hydrogen evolution catalysed by amorphous molybdenum sulphides on glassy carbon. A new chemical synthesis leads to an amorphous molybdenum sulfide catalyst with ...

Royal Soc Chemistry2013

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We exploit time- and angle-resolved photoemission spectroscopy to determine the evolution of the out-of-equilibrium electronic structure of the topological insulator Bi2Se3. The response of the Fermi-Dirac distribution to ultrashort IR laser pulses has bee ...

Amer Physical Soc2012

Band-edge levels in semiconductors and insulators: Hybrid density functional theory versus many-body perturbation theory

Alfredo Pasquarello, Wei Chen

We compare band-edge levels as obtained with hybrid functionals and GW perturbation theory for a wide class of materials. For sp-bonded semiconductors, a close agreement is demonstrated. However, deviations for other materials are more significant and rang ...

2012

Modeling Stressed MOS Oxides Using a Multiphonon-Assisted Quantum Approach—Part II: Transient Effects

Alexandre Schmid, Yusuf Leblebici, Davide Garetto

Multifrequency charge pumping analysis has been performed using a multiphonon-assisted charge trapping model in the view of analyzing the oxide region in energy and position that can be characterized using charge pumping (CP) characterization. Transient ph ...

Institute of Electrical and Electronics Engineers2012

Raman Spectroscopy of GaAs Nanowires

Bernt Ketterer

Semiconductor nanowires offer a wide range of opportunities for newgenerations of nanoscale electronic and optic devices. For these applications to become reality, deeper understanding of the fundamental properties of the nanowires is required. In this the ...

EPFL2011

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