Publication
Modeling Stressed MOS Oxides Using a Multiphonon-Assisted Quantum Approach—Part II: Transient Effects
Abstract
Multifrequency charge pumping analysis has been performed using a multiphonon-assisted charge trapping model in the view of analyzing the oxide region in energy and position that can be characterized using charge pumping (CP) characterization. Transient phenomena observed during CP and ac characterization (hysteresis loops) have been modeled, and the role of out-of- equilibrium quasi-Fermi levels in proximity of the Si/SiO2 inter- face has been studied in detail.
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