Shift workShift work is an employment practice designed to make use of, or provide service across, all 24 hours of the clock each day of the week (often abbreviated as 24/7). The practice typically sees the day divided into shifts, set periods of time during which different groups of workers perform their duties. The term "shift work" includes both long-term night shifts and work schedules in which employees change or rotate shifts.
Diatomic moleculeDiatomic molecules () are molecules composed of only two atoms, of the same or different chemical elements. If a diatomic molecule consists of two atoms of the same element, such as hydrogen () or oxygen (), then it is said to be homonuclear. Otherwise, if a diatomic molecule consists of two different atoms, such as carbon monoxide () or nitric oxide (), the molecule is said to be heteronuclear. The bond in a homonuclear diatomic molecule is non-polar.
Group schemeIn mathematics, a group scheme is a type of object from algebraic geometry equipped with a composition law. Group schemes arise naturally as symmetries of schemes, and they generalize algebraic groups, in the sense that all algebraic groups have group scheme structure, but group schemes are not necessarily connected, smooth, or defined over a field. This extra generality allows one to study richer infinitesimal structures, and this can help one to understand and answer questions of arithmetic significance.
Direct and indirect band gapsIn semiconductor physics, the band gap of a semiconductor can be of two basic types, a direct band gap or an indirect band gap. The minimal-energy state in the conduction band and the maximal-energy state in the valence band are each characterized by a certain crystal momentum (k-vector) in the Brillouin zone. If the k-vectors are different, the material has an "indirect gap". The band gap is called "direct" if the crystal momentum of electrons and holes is the same in both the conduction band and the valence band; an electron can directly emit a photon.
Silicon on sapphireSilicon on sapphire (SOS) is a hetero-epitaxial process for metal–oxide–semiconductor (MOS) integrated circuit (IC) manufacturing that consists of a thin layer (typically thinner than 0.6 μm) of silicon grown on a sapphire (Al2O3) wafer. SOS is part of the silicon-on-insulator (SOI) family of CMOS (complementary MOS) technologies. Typically, high-purity artificially grown sapphire crystals are used. The silicon is usually deposited by the decomposition of silane gas (SiH4) on heated sapphire substrates.
Derived schemeIn algebraic geometry, a derived scheme is a pair consisting of a topological space X and a sheaf either of simplicial commutative rings or of commutative ring spectra on X such that (1) the pair is a scheme and (2) is a quasi-coherent -module. The notion gives a homotopy-theoretic generalization of a scheme. A derived stack is a stacky generalization of a derived scheme. Over a field of characteristic zero, the theory is closely related to that of a differential graded scheme.
Atomic orbitalIn atomic theory and quantum mechanics, an atomic orbital (ˈɔːrbɪtəl) is a function describing the location and wave-like behavior of an electron in an atom. This function can be used to calculate the probability of finding any electron of an atom in any specific region around the atom's nucleus. The term atomic orbital may also refer to the physical region or space where the electron can be calculated to be present, as predicted by the particular mathematical form of the orbital.
Electron mobilityIn solid-state physics, the electron mobility characterises how quickly an electron can move through a metal or semiconductor when pulled by an electric field. There is an analogous quantity for holes, called hole mobility. The term carrier mobility refers in general to both electron and hole mobility. Electron and hole mobility are special cases of electrical mobility of charged particles in a fluid under an applied electric field. When an electric field E is applied across a piece of material, the electrons respond by moving with an average velocity called the drift velocity, .
Orbital hybridisationIn chemistry, orbital hybridisation (or hybridization) is the concept of mixing atomic orbitals to form new hybrid orbitals (with different energies, shapes, etc., than the component atomic orbitals) suitable for the pairing of electrons to form chemical bonds in valence bond theory. For example, in a carbon atom which forms four single bonds the valence-shell s orbital combines with three valence-shell p orbitals to form four equivalent sp3 mixtures in a tetrahedral arrangement around the carbon to bond to four different atoms.
HeterojunctionA heterojunction is an interface between two layers or regions of dissimilar semiconductors. These semiconducting materials have unequal band gaps as opposed to a homojunction. It is often advantageous to engineer the electronic energy bands in many solid-state device applications, including semiconductor lasers, solar cells and transistors. The combination of multiple heterojunctions together in a device is called a heterostructure, although the two terms are commonly used interchangeably.
