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Silicon heterojunction solar cells have high open-circuit voltages thanks to excellent passivation of the wafer surfaces by thin intrinsic amorphous silicon (a-Si:H) layers deposited by plasma-enhanced chemical vapor deposition (PECVD). By using in-situ plasma diagnostics and ex-situ film characterization, we show that the best a-Si:H films for passivation are produced from deposition regimes close to the amorphous-to-crystalline transition. Based upon this finding, layers deposited in a large-area very high frequency (40.68 MHz) PECVD reactor were optimized for heterojunction solar cells. 4 cm2 solar cells were produced with fully industry-compatible processes, yielding open-circuit voltages up to 725 mV and aperture area efficiencies up to 21%.
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Christophe Ballif, Loris Barraud, Stefaan De Wolf, Antoine Descoeudres
Christophe Ballif, Loris Barraud, Priscille Marguerite Bôle Rothen, Stefaan De Wolf, Antoine Descoeudres
Christophe Ballif, Loris Barraud, Priscille Marguerite Bôle Rothen, Stefaan De Wolf, Antoine Descoeudres